Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip von Snoeys, W., Faccio, F., Burns, M., Campbell, M., Cantatore, E., Carrer, N., Casagrande, L., Cavagnoli, A., Dachs, C., Di Liberto, S., Formenti, F., Giraldo, A., Heijne, E.H.M., Jarron, P., Letheren, M., Marchioro, A., Martinengo, P., Meddi, F., Mikulec, B., Morando, M., Morel, M., Noah, E., Paccagnella, A., Ropotar, I., Saladino, S., Sansen, W., Santopietro, F., Scarlassara, F., Segato, G.F., Signe, P.M., Soramel, F., Vannucci, L., Vleugels, K.

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Simultaneous measurement of intracellular Ca2+and nitric oxide: a new method von Berkels, R., Dachs, C., Roesen, R., Klaus, W.

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Simultaneous measurement of intracellular Ca(2+) and nitric oxide: a new method von Berkels, R, Dachs, C, Roesen, R, Klaus, W

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Impact of downscaling and poly-gate depletion on the RF noise parameters of advanced nMOS transistors von Nuttinck, S., Scholten, A.J., Tiemeijer, L.F., Cubaynes, F., Dachs, C., Detcheverry, C., Hijzen, E.A.

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A review of the techniques used for modeling single-event effects in power MOSFETs von Johnson, G.H., Palau, J.M., Dachs, C., Galloway, K.F., Schrimpf, R.D.

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SEU critical charge and sensitive area in a submicron CMOS technology von Detcheverry, C., Dachs, C., Lorfevre, E., Sudre, C., Bruguier, G., Palau, J.M., Gasiot, J., Ecoffet, R.

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SEGR and SEB in n-channel power MOSFETs von Allenspach, M., Dachs, C., Johnson, G.H., Schrimpf, R.D., Lorfevre, E., Palau, J.M., Brews, J.R., Galloway, K.F., Titus, J.L., Wheatley, C.F.

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Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs von Roubaud, F., Dachs, C., Palau, J.-M., Gasiot, J., Tastet, P.

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Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs von Dachs, C., Roubaud, F., Palau, J.-M., Bruguier, G., Gasiot, J., Tastet, P.

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Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout von Dachs, C., Roubaud, F., Palau, J.-M., Bruguier, G., Gasiot, J., Tastet, P., Calvett, M.-C., Calvel, P.

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Heavy ion induced failures in a power IGBT von Lorfevre, E., Dachs, C., Detcheverry, C., Palau, J.-M., Gasiot, J., Roubaud, F., Calvet, M.-C., Ecoffet, R.

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A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs von Johnson, G.H., Galloway, K.F., Schrimpf, R.D., Titus, J.L., Wheatley, C.F., Allenspach, M., Dachs, C.

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SEB occurrence in a VIP: Influence of the epi-substrate junction von Lorfevre, E., Sudre, C., Dachs, C., Detcheverry, C., Palau, J.-M., Gasiot, J., Calvet, M.-C., Garnie, J., Ecoffet, R.

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Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications von Veloso, A., Cubaynes, F.N., Rothschild, A., Mertens, S., Degraeve, R., O'Connor, R., Olsen, C., Date, L., Schaekers, M., Dachs, C., Jurczak, M.

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Angular stable fixation of displaced distal-third clavicle fractures with superior precontoured locking plates von Fleming, Mark A., FC Orth(SA), MMED, Dachs, Robert, FC Orth(SA), MMED, Maqungo, Sithombo, FC Orth(SA), MMED, du Plessis, Jean-Pierre, FC Orth(SA), MMED, Vrettos, Basil C., FC Orth(SA), Roche, Stephen J.L., FC Orth(SA)

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A practical baseline process for advanced CMOS devices research [sub-50 nm MOSFETs] von Ponomarev, Y.V., Loo, J.J.G.P., Rittersma, Z.M., Lander, R.J.P., Hooker, J.C., Doornbos, G., Surdeanu, R., Cubaynes, F.N., Dachs, C.J.J., Kubicek, S., Henson, K., Lindsay, R.

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Gate Dielectrics for High Performance and Low Power CMOS SoC Applications von Cubaynes, F., Dachs, C., Detcheverry, C., Zegers, A., Venezia, V., Schmitz, J., Stolk, P., Jurczak, M., Henson, K., Degraeve, R., Rothschild, A., Conard, T., Petry, J., Da Rold, M., Schaekers, M., Badenes, G., Date, L., Pique, D., Al-Shareef, H., Murto, R.

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Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth von Pawlak, B. J., Lindsay, R., Surdeanu, R., Dieu, B., Geenen, L., Hoflijk, I., Richard, O., Duffy, R., Clarysse, T., Brijs, B., Vandervorst, W., Dachs, C. J. J.

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9. 2: Multi-Format Digital Display with Content Driven Display Format(2:Session 9:PANEL DRIVE SCHEMES)(Report on 2001 SID International Symposium) von Cairns, G., Dachs, C., Brownlow, M., Kubota, Y., Washio, H., Hijikigawa, M.

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Simultaneous measurement of intracellular Ca super(2+) and nitric oxide: a new method von Berkels, R, Dachs, C, Roesen, R, Klaus, W

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