Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors von Kim, S, Ryou, J.-H, Dupuis, R.D, Kim, H

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Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells von Jae-Hyun Ryou, Yoder, P.D., Jianping Liu, Lochner, Z., Hyunsoo Kim, Suk Choi, Hee Jin Kim, Dupuis, R.D.

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History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes von Dupuis, R.D., Krames, M.R.

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Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD von Shyh-Chiang Shen, Yun Zhang, Dongwon Yoo, Jae-Boum Limb, Jae-Hyun Ryou, Yoder, P.D., Dupuis, R.D.

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Epitaxial growth of III–V nitride semiconductors by metalorganic chemical vapor deposition von Dupuis, R.D.

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Low dark current GaN avalanche photodiodes von Yang, B., Li, T., Heng, K., Collins, C., Wang, S., Carrano, J.C., Dupuis, R.D., Campbell, J.C., Schurman, M.J., Ferguson, I.T.

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Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared p... von Huang, Y., Ryou, J.-H., Dupuis, R.D., D'Costa, V.R., Steenbergen, E.H., Fan, J., Zhang, Y.-H., Petschke, A., Mandl, M., Chuang, S.-L.

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III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition von Dupuis, R.D.

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Effect of Silicon Doping in the Quantum-Well Barriers on the Electrical and Optical Properties of Visible Green Light-Emitting Diodes von Jae-Hyun Ryou, Jae Limb, Wonseok Lee, Jianping Liu, Lochner, Z., Dongwon Yoo, Dupuis, R.D.

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Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors von Huang, J.J., Hattendorf, M., Feng, M., Lambert, D.J.H., Shelton, B.S., Wong, M.M., Chowdhury, U., Zhu, T.G., Kwon, H.K., Dupuis, R.D.

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Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al0.5Ga0.5N Substrates von Wang, Xudong, Song, Jinhui, Li, Peng, Ryou, Jae Hyun, Dupuis, Russell D, Summers, Christopher J, Wang, Zhong L

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Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors von Shyh-Chiang Shen, Yi-Che Lee, Hee-Jin Kim, Yun Zhang, Suk Choi, Dupuis, R.D., Jae-Hyun Ryou

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Electrical Characteristics of Metal Contacts to Laser-Irradiated N-Polar n-Type GaN von Hyunsoo Kim, Jae-Hyun Ryou, Dupuis, R.D., Taesung Jang, Yongjo Park, Sung-Nam Lee, Tae-Yeon Seong

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Thin films of gallium arsenide on low-cost substrates : final technical report for period July 5, 1976-December 5, 1978 / by R.P. Ruth, P.D. Dapkus, R.D. Dupuis, R.E. Johnson, L.A. Moudy, J.J. Jang, R.D. Yingling von Ruth, R. P. 1925

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32×32 ultraviolet Al0.1Ga0.9N/GaN p-i-n photodetector array von Yang, B, Heng, K, Li, T, Collins, C.J, Wang, S, Dupuis, R.D, Campbell, J.C, Schurman, M.J, Ferguson, I.T

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Simulation of the electrical characteristics of AlGaN/GaN heterojunction bipolar transistors von Lambert, D.J.H, Lin, D.E, Dupuis, R.D

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Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser von Kondratko, P.K., Shun-Lien Chuang, Walter, G., Holonyak, N., Heller, R.D., Xuebing Zhang, Dupuis, R.D.

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Nitride-Based Green Light-Emitting Diodes With Various p-Type Layers von Wonseok Lee, Jae Limb, Jae-Hyun Ryou, Dongwon Yoo, Ewing, M.A., Korenblit, Y., Dupuis, R.D.

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Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing von Jungho Kim, Kondratko, P.K., Shun Lien Chuang, Walter, G., Holonyak, N., Heller, R.D., Zhang, X.B., Dupuis, R.D.

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Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz von Hampson, M.D., Shyh-Chiang Shen, Schwindt, R.S., Price, R.K., Chowdhury, U., Wong, M.M., Ting Gang Zhu, Dongwon Yoo, Dupuis, R.D., Milton Feng

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