Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices von Chow, D. H., Miles, R. H., Hasenberg, T. C., Kost, A. R., Zhang, Y.-H., Dunlap, H. L., West, L.

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Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes von Fay, P., Lu Jiang, Xu, Y., Bernstein, G.H., Chow, D.H., Schulman, J.N., Dunlap, H.L., de los Santos, H.J.

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Temperature dependence of Sb-heterostructure millimetre-wave diodes von Schulman, J.N., Holabird, K.S., Chow, D.H., Dunlap, H.L., Thomas, S., Croke, E.T.

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InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits von Chow, D.H., Dunlap, H.L., Williamson, W., Enquist, S., Gilbert, B.K., Subramaniam, S., Lei, P.-M., Bernstein, G.H.

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Lipid metabolite responses to diet and training in sled dogs von REYNOLDS, A. J, FUHRER, L, DUNLAP, H. L, FINKE, M. D, KALLFELZ, F. A

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An efficient HBT/RTD oscillator for wireless applications von De Los Santos, H.J., Chui, K.K., Chow, D.H., Dunlap, H.L.

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Structural and transport properties of InAs/AlSb superlattices von Chow, D.H., Zhang, Y.H., Miles, R.H., Dunlap, H.L.

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12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates von Williamson, W., Enquist, S.B., Chow, D.H., Dunlap, H.L., Subramaniam, S., Peiming Lei, Bernstein, G.H., Gilbert, B.K.

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Solid phase regrowth of low temperature Be-implanted GaAs von SOOK-II KWUN, LEE, M. H, LIOU, L. L, SPITZER, W. G, DUNLAP, H. L, VAIDYANATHAN, K. V

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Kinetics and thermodynamics of (CCF3)6 valence isomer interconversions von Lemal, D. M, Dunlap, L. H

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Planar, ion-implanted bipolar devices in GaAs von Vaidyanathan, K.V., Jullens, R.A., Anderson, C.L., Dunlap, H.L.

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Metabolic responses to exhaustive exercise in racing sled dogs fed diets containing medium, low, or zero carbohydrate von Hammel, EP, Kronfeld, DS, Ganjam, VK, Dunlap, HL

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Impurity-peak formation during proton-enhanced diffusion of phosphorus and boron in silicon von Akutagawa, W., Dunlap, H.L., Hart, R., Marsh, O. J.

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Low-temperature annealing behavior of GaAs implanted with Be von Anderson, C. Lawrence, Dunlap, H. L.

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Photoemission oscillation measurement of barrier thickness for InAs/AlSb resonant tunneling diodes von Zinck, J. J., Chow, D. H., Schulman, J. N., Dunlap, H. L.

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Capless Annealing of Ion‐Implanted Gallium Arsenide by a Melt‐Controlled Ambient Technique von Anderson, C. Lawrence, Vaidyanathan, K. V., Dunlap, H. L., Kamath, G. S.

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High current density Ga+ implantations into Si von Hart, R. R., Anderson, C. L., Dunlap, H. L., Seliger, R. L., Wang, V.

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Ion-induced migration of Cu into Si von Hart, R. R., Dunlap, H. L., Marsh, O. J.

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Optical studies of Be-implanted GaAs von Kwun, Sook-Il, Spitzer, W. G., Anderson, C. L., Dunlap, H. L., Vaidyanathan, K. V.

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DIODES IN SILICON CARBIDE BY ION IMPLANTATION von Dunlap, H. L., Marsh, O. J.

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