Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices von Medjdoub, Farid, Grimbert, Bertrand, Ducatteau, Damien, Rolland, Nathalie

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InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate von Thiam, Arame, Roelens, Yannick, Coinon, Christophe, Avramovic, Vanessa, Grandchamp, Brice, Ducatteau, Damien, Wallart, Xavier, Maneux, Cristell, Zaknoune, Mohammed

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Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors von Medjdoub, Farid, Ducatteau, Damien, Zegaoui, Malek, Grimbert, Bertrand, Rolland, Nathalie, Rolland, Paul-Alain

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First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz von Medjdoub, F., Zegaoui, M., Grimbert, B., Ducatteau, D., Rolland, N., Rolland, P. A.

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High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate von Medjdoub, F., Zegaoui, M., Ducatteau, D., Rolland, N., Rolland, P. A.

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Quantitative impedance characterization of sub-10 nm scale capacitors and tunnel junctions with an interferometric scanning microwave microscope von Wang, Fei, Clément, Nicolas, Ducatteau, Damien, Troadec, David, Tanbakuchi, Hassan, Legrand, Bernard, Dambrine, Gilles, Théron, Didier

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Quantitative impedance characterization of sub-10nm scale capacitors and tunnel junctions with an interferometric scanning microwave microscope von FEI WANG, CLEMENT, Nicolas, DUCATTEAU, Damien, TROADEC, David, TANBAKUCHI, Hassan, LEGRAND, Bernard, DAMBRINE, Gilles, THERON, Didier

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Quantitative impedance characterization of sub-10 nm scale capacitors and tunnel junctions with an interferometric scanning microwave microscope von Wang, Fei, Clément, Nicolas, Ducatteau, Damien, Troadec, David, Tanbakuchi, Hassan, Legrand, Bernard, Dambrine, Gilles, Theron, Didier

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Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz von Medjdoub, F., Tagro, Y., Zegaoui, M., Grimbert, B., Danneville, F., Ducatteau, D., Rolland, N., Rolland, P. A.

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High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band von Pottrain, A., Lacave, T., Ducatteau, D., Gloria, D., Chevalier, P., Gaquiere, C.

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0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz von Zaknoune, Mohammed, Okada, Etienne, Mairiaux, Estelle, Roelens, Yannick, Ducatteau, Damien, Frijlink, Peter, Rocchi, Marc, Maher, Hassan

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0.2- \mu InP/GaAsSb DHBT Power Performance With 10 /\mu^ and 25% PAE at 94 GHz von Zaknoune, Mohammed, Okada, Etienne, Mairiaux, Estelle, Roelens, Yannick, Ducatteau, Damien, Frijlink, Peter, Rocchi, Marc, Maher, Hassan

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0.2-μm InP/GaAsSb DHBT Power Performance With 10 mW/μm2 and 25% PAE at 94 GHz von ZAKNOUNE, Mohammed, OKADA, Etienne, MAIRIAUX, Estelle, ROELENS, Yannick, DUCATTEAU, Damien, FRIJLINK, Peter, ROCCHI, Marc, MAHER, Hassan

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Radiation Pattern Measurements of an Integrated Transverse Electromagnetic Horn Antenna Using a Terahertz Photomixing Setup von Prissette, L, Ducournau, G, Akalin, T, Peytavit, E, Beck, A, Zaknoune, M, Ducatteau, D, Lampin, J F

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E-beam Fabricated GaN Schottky diode: High-frequency and non-linear properties von Chong Jin, Zaknoune, Mohammed, Ducatteau, Damien, Pavlidis, Dimitris

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Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas von Amar, Achraf Ben, Faucher, Marc, Grimbert, Bertrand, Cordier, Yvon, Fran\{c}ois, Marc, Tilmant, Pascal, Werquin, Matthieu, Zhang, Victor, Ducatteau, Damien, Gaquière, Christophe, Buchaillot, Lionel, Théron, Didier

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CMOS Integration Using Low Thermal Budget Dopant-Segregated Metallic S/D Junctions on Thin-Body SOI von Larrieu, Guilhem, Dubois, Emmanuel, Ducatteau, Damien

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Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors von Curutchet, A., Theron, D., Werquin, M., Ducatteau, D., Happy, H., Dambrine, G., Bethoux, J.M., Derycke, V., Gaquiere, C.

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Toward highly scaled AlN/GaN-on-Silicon devices for millimeter wave applications von Medjdoub, Farid, Tagro, Yoann, Grimbert, Bertrand, Ducatteau, Damien, Rolland, Nathalie

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First AlN/GaN HEMTs power measurement at 18 GHz on Silicon substrate von Medjdoub, F., Zegaoui, M., Ducatteau, D., Rolland, N., Rolland, P. A.

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