Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs von Dubecký, F., Dubecký, M., Hubík, P., Kindl, D., Gombia, E., Baldini, M., Nečas, V.

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Development of x-ray and ion diagnostics of plasma obtained with a 10-TW femtosecond laser von Ry, L, Dobrza ski, L, Dubecky, F, Jab o ski, S, Parys, P, S ysz, W, Rosi ski, M

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Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs von Dubecký, F., Zaťko, B., Kolesár, V., Kindl, D., Hubík, P., Gombia, E., Dubecký, M.

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A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization von Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., Mudroň, J.

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Performance of a Schottky surface barrier radiation detector based on bulk undoped semi-insulating GaAs at reduced temperature von Zat'ko, B., Dubecky, F.

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High resolution alpha particle detectors based on 4H-SiC epitaxial layer von Zat'ko, B., Dubecký, F., Šagátová, A., Sedlačová, K., Ryć, L.

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Simulation of the reverse I–V characteristics of the Schottky barrier radiation detector structures prepared on semi-insulating GaAs von BOHACEK, P, DUBECKY, F, SEKACOVA, M

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Schottky barrier detectors based on high quality 4H-SiC semiconductor: Electrical and detection properties von Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., Nečas, V.

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GaAs detectors irradiated by low doses of electrons von Šagátová, A, Zat'ko, B, Pavlovič, M, Sedlačková, K, Hybler, P, Dubecký, F, Nečas, V

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Gallium arsenide photodetectors for imaging in the far ultraviolet region von Caria, M., Barberini, L., Cadeddu, S., Giannattasio, A., Rusani, A., Sesselego, A., Lai, A., D’Auria, S., Dubecky, F.

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Semiconductor detector based on 4H-SiC and analysis of its active region thickness von Zat'ko, B, Sedlackova, K, Dubecky, F, Sagatova, A, Bohacek, P, Necas, V

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Characterization of epitaxial 4H-SiC for photon detectors von Dubecky, F, Gombia, E, Ferrari, C, Zat'ko, B, Vanko, G, Baldini, M, Kovac, J, Bacek, D, Kovac, P, Hrkut, P, Necas, V

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Semi-insulating GaAs detectors optimized for fast neutron detection von Sagatova, A, Zat'ko, B, Sedlackova, K, Necas, V, Dubecky, F, Bohacek, P, Chodak, I

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The X-ray response of InP: Part B, synchrotron radiation measurements von Owens, Alan, Peacock, A., Bavdaz, M., Brammertz, G., Dubeckỳ, F., Gostilo, V., Gryaznov, D., Haack, N., Krumrey, M., Loupilov, A.

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Technology and Performance Study of a Two-Line Monolithic X- and \gamma-Ray Detection Chip Based on Semi-Insulating GaAs von Bohacek, P., Dubecky, F., Zat'ko, B., Sekacova, M., Huran, J., Necas, V., Mudron, J.

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Unexpected current lowering by a low work-function metal contact: Mg/SIaGaAs von Dubecky, F, Dubecky, M, Hubik, P, Kindl, D, Gombia, E, Baldini, M, Necas, V

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Detection of fast neutrons using detectors based on semi-insulating GaAs von Zat'ko, B, Sedlackova, K, Dubecky, F, Bohacek, P, Sekacova, M, Necas, V

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Technology and Performance Study of a Two-Line Monolithic X- and [Formula Omitted]-Ray Detection Chip Based on Semi-Insulating GaAs von Bohacek, P, Dubecky, F, Zat'ko, B, Sekacova, M, Huran, J, Necas, V, Mudron, J

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Investigation of compensation defect centres in semi-insulating InP crystals von Kaminski, P., Pawlowski, M., Kozłowski, R., Surma, B., Dubecky, F., Yamada, M., Fukuzawa, M.

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Role of electrode metallization in the performance of bulk semi-insulating InP radiation detectors von Zaťko, B., Dubecký, F., Procházková, O., Nečas, V.

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