Diagnostic studies of aluminum etching in an inductively coupled plasma system: Determination of electron temperatures and connections to plasma-induced damage von Malyshev, M. V., Donnelly, V. M., Downey, S. W., Colonell, J. I., Layadi, N.

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Single Particle Characterization by Time-of-Flight Mass Spectrometry von Reents, W. D., Downey, S. W., Emerson, A. B., Mujsce, A. M., Muller, A. J., Siconolfi, D. J., Sinclair, J. D., Swanson, A. G.

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Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors von REN, F, FULLOWAN, T. R, LOTHIAN, J, WISK, P. W, ABERNATHY, C. R, KOPF, R. F, EMERSON, A. B, DOWNEY, S. W, PEARTON, S. J

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Detection of Sputtered Neutrals by Ultrahigh-Intensity Postionization in the Near-Infrared von Wise, Michael L, Emerson, A. Bruce, Downey, Stephen W

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Interfacial Segregation in Strained Heterostructures: Boron in Si0.8Ge0.2/Si von Moriya, N, Feldman, LC, Downey, SW, King, CA, Emerson, AB

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Quantitative depth profiling resonance ionization mass spectrometry of semiconductors with minimum standardization von Downey, S. W, Emerson, A. B

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Factors Affecting the Quantification of Boron in SiO2 and Si by Sputtered Neutral Mass Spectrometry von Wise, Michael L., Moriya, Netzer, Downey, Stephen W.

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Sputtering effects in Si, SiO2 and the Si/SiO2 interface von Downey, S. W., Emerson, A. B.

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SURFACE EFFECTS ON CARRIER DYNAMICS - PHOTOCONDUCTIVITY STUDIES ON SI (111) von HSU, JWP, BAHR, CC, FELDE, AV, DOWNEY, SW, HIGASHI, GS, CARDILLO, MJ

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Depth profiling resonance ionization mass spectrometry of Be-doped, layered III-V compound semiconductors von Downey, S. W., Emerson, A. B., Kopf, R. F., Kuo, J. M.

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Materials analysis by laser and ion beam sputtering with resonance ionization mass spectrometry von Nogar, N.S., Estler, R.C., Fearey, B.L., Miller, C.M., Downey, S.W.

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Replacement ion chromatography with flame photometric detection von Downey, S.W., Hieftje, G.M.

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Antimony doping of ZnTe grown by molecular beam epitaxy von Feldman, R.D., Austin, R.F., Sher, A., Schnoes, M.L., Downey, S.W., Emerson, A.B., Harris, T.D., Spitzer, R.C., Gualtieri, G.J., Schwartz, G.P.

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Multiple photon processes in tantalum resonance ionization mass spectrometry von Nogar, N. S, Downey, S. W, Miller, C. M

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An optogalvanic study of rydberg oxygen atoms von Keaton, G.L., Nogar, N.S., Downey, S.W.

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Reduction of spectral interferences in inductively-coupled plasma emission spectrometry by selective spectral-line modulation von Downey, S.W., Hieftje, G.M.

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Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors von Ren, F., Fullowan, T.R., Abernathy, C.R., Emerson, A.B., Pearton, Stephen J., Wisk, P.W., Lothian, J.R., Kopf, R.F., Downey, S.W.

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Spatially resolved, intracavity absorption for inductively coupled plasma diagnostics von Downey, S.W., Keaton, G.L., Nogar, N.S.

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Radiation-induced transient darkening of optically transparent polymers von Downey, S. W., Builta, L. A., Carlson, R. L., Czuchlewski, S. J., Moir, D. C.

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Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry von Stevie, F. A., Downey, S. W., Brown, S. R., Shofner, T. L., Decker, M. A., Dingle, T., Christman, L.

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