NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate von Lochner, Zachary, Jin Kim, Hee, Lee, Yi-Che, Zhang, Yun, Choi, Suk, Shen, Shyh-Chiang, Doug Yoder, P., Ryou, Jae-Hyun, Dupuis, Russell D.

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Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition von JIANPING LIU, YUN ZHANG, SUN, Kewei W, FISCHER, Alec M, PONCE, Fernando A, LOCHNER, Zachary, KIM, Seong-Soo, KIM, Hyunsoo, RYOU, Jae-Hyun, SHEN, Shyh-Chiang, DOUG YODER, P, DUPUIS, Russell D, WEI, Qiyuan Y

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Anisotropic Transient and Stationary Electron Velocity in Bulk Wurtzite GaN von Sridharan, S., Yoder, P.D.

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NpN-GaN/In x Ga 1−x N/GaN heterojunction bipolar transistor on free-standing GaN substrate von Lochner, Zachary, Jin Kim, Hee, Lee, Yi-Che, Zhang, Yun, Choi, Suk, Shen, Shyh-Chiang, Doug Yoder, P., Ryou, Jae-Hyun, Dupuis, Russell D.

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Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition von Liu, Jianping, Zhang, Yun, Lochner, Zachary, Kim, Seong-Soo, Kim, Hyunsoo, Ryou, Jae-Hyun, Shen, Shyh-Chiang, Doug Yoder, P., Dupuis, Russell D., Wei, Qiyuan Y., Sun, Kewei W., Fischer, Alec M., Ponce, Fernando A.

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