On laparoscopic photoplethysmography and pulse oximetry von López-Silva, S. M., Dotor, M. L., Giannetti, R.

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Broadband antireflective nano-cones for tandem solar cells von Buencuerpo, J, Llorens, J M, Dotor, M L, Ripalda, J M

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Lateral composition modulation in strain compensated (GaInP) m(GaInAs) m short-period superlattices grown on (0 0 1) InP by atomic layer molecular beam epitaxy von Golmayo, D., Dotor, M.L., Quintana, C.

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Self-assembled InAs quantum wire lasers on (001)InP at 1.6 μ m von Suárez, F., Fuster, D., González, L., González, Y., García, J. M., Dotor, M. L.

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Nano-cones for broadband light coupling to high index substrates von Buencuerpo, J., Torné, L., Álvaro, R., Llorens, J. M., Dotor, M. L., Ripalda, J. M.

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(InP) 5/(Ga 0.47In 0.53As) 4 short-period superlattices waveguides for InAs quantum wires lasers von Suárez, F., Fuster, D., González, L., González, Y., García, J.M., Dotor, M.L.

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Tuning of spontaneous emission of two-dimensional photonic crystal microcavities by accurate control of slab thickness von Alija, A. R., Martínez, L. J., García-Martín, A., Dotor, M. L., Golmayo, D., Postigo, P. A

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Laser devices with stacked layers of InGaAs/GaAs quantum rings von Suárez, Ferran, Granados, Daniel, Dotor, María Luisa, García, Jorge M

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Analysis of local deformations in heterostructures containing short period superlattices by high-resolution transmission electron microscopy von Quintana, C., Golmayo, D., Dotor, M. L., Lancin, M.

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Observation of dislocation generation in highly strained quantum well lasers during operation von Mazuelas, A, Dotor, M L, Golmayo, D, Zeimer, U, Baumbach, T, Luebbert, D, Grenzer, J, Baruchel, J

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Photon management with nanostructures on concentrator solar cells von Buencuerpo, J., Llorens, J. M., Dotor, M. L., Ripalda, J. M.

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Self-assembled InAs quantum wire lasers on (001)InP at 1.6 {mu}m von Suarez, F., Fuster, D., Gonzalez, L., Gonzalez, Y., Garcia, J. M., Dotor, M. L.

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Strain induced lateral ordering in Ga0.22In0.78As/Ga0.22In0.78P short period superlattices on (001) InP von DOTOR, M. L, QUINTANA, C, GOLMAYO, D

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Ga0.47In053As multiquantum well heterostructures, confined by pseudoquaternary (InP)n/(Ga0.47In0.53As)m short period superlattices lattice-matched to InP von DOTOR, M. L, HUERTAS, P, GOLMAYO, D, BRIONES, F

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(Ga 0.22In 0.78As) m⧸(Ga 0.22In 0.78P) m superlattices grown by atomic-layer molecular beam epitaxy on InP von Dotor, M.L., Golmayo, D., Briones, F.

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Optimization of a carbon evaporator cell for MBE growth von Fuster, D., González, Y., González, L., Méndez, J., García, F., Córdoba-Cabanillas, J.L., Dotor, M.L., Alvaro, R., Torné, L., García, J.M.

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Electrical and optical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy von Postigo, P. A., Dotor, M. L., Huertas, P., Golmayo, D., Briones, F.

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Transmittance photoplethysmography with near-infrared laser diodes in intra-peritoneal organs von López-Silva, S M, Silveira, J P, Dotor, M L, Giannetti, R, Golmayo, D, Herrera, L

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Quantum well lasers with InAs monolayers in the active region grown at low temperature by atomic layer molecular beam epitaxy von Dotor, M.L., Meléndez, J., Huertas, P., Mazuelas, A., Garriga, M., Golmayo, D., Briones, F.

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Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopy von Mazuelas, A., Molina, S.I., Aragón, G., Meléndez, J., Dotor, M.L., Huertas, P., Briones, F.

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