Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials von Vurgaftman, I., Belenky, G., Lin, Y., Donetsky, D., Shterengas, L., Kipshidze, G., Sarney, W. L., Svensson, S. P.

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Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization von Svensson, S.P., Donetsky, D., Wang, D., Hier, H., Crowne, F.J., Belenky, G.

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Bulk InAsSb with 0.1 eV bandgap on GaAs von Sarney, W. L., Svensson, S. P., Xu, Y., Donetsky, D., Belenky, G.

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Temperature dependent Hall effect in InAsSb with a 0.11 eV 77 K-bandgap von Svensson, S. P., Beck, W. A., Sarney, W. L., Donetsky, D., Suchalkin, S., Belenky, G.

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InAsSb-based heterostructures for infrared light modulation von Donetsky, D., Liu, J., Kipshidze, G., Shterengas, L., Belenky, G., Sarney, W. L., Svensson, S. P.

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Ultra-short period Ga-free superlattice growth on GaSb von Sarney, W. L., Svensson, S. P., Yakes, M. K., Xu, Y., Donetsky, D., Belenky, G.

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Lattice parameter engineering for III–V long wave infrared photonics von Belenky, G, Lin, Y, Shterengas, L, Donetsky, D, Kipshidze, G, Suchalkin, S

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Molecular beam epitaxy control and photoluminescence properties of InAsBi von Svensson, S. P., Hier, H., Sarney, W. L., Donetsky, D., Wang, D., Belenky, G.

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Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb von Sarney, W. L., Svensson, S. P., Lin, Y., Donetsky, D., Shterengas, L., Kipshidze, G., Belenky, G.

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Investigation of periodically driven systems by x-ray absorption spectroscopy using asynchronous data collection mode von Singh, H., Donetsky, D., Liu, J., Attenkofer, K., Cheng, B., Trelewicz, J. R., Lubomirsky, I., Stavitski, E., Frenkel, A. I.

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AlInAsSb for M-LWIR detectors von Sarney, W.L., Svensson, S.P., Wang, D., Donetsky, D., Kipshidze, G., Shterengas, L., Lin, Y., Belenky, G.

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Background and interface electron populations in InAs0.58Sb0.42 von Svensson, S P, Crowne, F J, Hier, H S, Sarney, W L, Beck, W A, Lin, Y, Donetsky, D, Suchalkin, S, Belenky, G

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Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices von Lin, Y., Wang, D., Donetsky, D., Belenky, G., Hier, H., Sarney, W. L., Svensson, S. P.

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Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers von Jianfeng Chen, Donetsky, D., Shterengas, L., Kisin, M.V., Kipshidze, G., Belenky, G.

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2.3 μm type-I quantum well GalnAsSb /AlGaAsSb /GaSb laser diodes with quasi-CW output power of 1.4W von DONETSKY, D, KIPSHIDZE, G, SHTERENGAS, L, HOSODA, T, BELENKY, G

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2.7- \mu m GaSb-Based Diode Lasers With Quinary Waveguide von Chen, J., Kipshidze, G., Shterengas, L., Hosoda, T., Wang, Y., Donetsky, D., Belenky, G.

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Measurement of the Auger recombination rate in p -type 0.54 eV GaInAsSb by time-resolved photoluminescence von Anikeev, S., Donetsky, D., Belenky, G., Luryi, S., Wang, C. A., Borrego, J. M., Nichols, G.

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Properties of unrelaxed InAs1−XSbX alloys grown on compositionally graded buffers von Belenky, G., Donetsky, D., Kipshidze, G., Wang, D., Shterengas, L., Sarney, W. L., Svensson, S. P.

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Current spread and overheating of high power laser bars von Laikhtman, B., Gourevitch, A., Donetsky, D., Westerfeld, D., Belenky, G.

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Thermal resistance and optimal fill factor of a high power diode laser bar von Laikhtman, B, Gourevitch, A, Westerfeld, D, Donetsky, D, Belenky, G

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