Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs with Individual Mapping of Basal Plane Dislocations von Pham, Thanh Toan, Domeij, Martin, Maslougkas, Sotirios, Kochoska, Sara, Sunkari, Swapna, Das, Hrishikesh, Justice, Joshua

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Surface-Passivation Effects on the Performance of 4H-SiC BJTs von Ghandi, R, Buono, B, Domeij, M, Esteve, R, Schöner, A, Jisheng Han, Dimitrijev, S, Reshanov, S A, Zetterling, C-M, Östling, M

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Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs von Buono, B., Ghandi, R., Domeij, M., Malm, B.G., Zetterling, C.-M., Ostling, M.

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Modeling and Characterization of the on-Resistance in 4H-SiC Power BJTs von Buono, B, Ghandi, R, Domeij, M, Malm, B G, Zetterling, Carl-Mikael, Ostling, M

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Body Diode of 1.2kV SiC MOSFET: Unipolar and Bipolar Operation von Pham, Thanh Toan, Franchi, Jimmy, Domeij, Martin

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Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors von Hallén, Anders, Nawaz, Muhammad, Zaring, Carina, Usman, Muhammad, Domeij, Martin, Östling, Mikael

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Influence of Emitter Width and Emitter-Base Distance on the Current Gain in 4H-SiC Power BJTs von Buono, Benedetto, Ghandi, Reza, Domeij, Martin, Malm, Bengt Gunnar, Zetterling, Carl-Mikael, Östling, Mikael

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Dynamic avalanche and reliability of high voltage diodes von Lutz, Josef, Domeij, Martin

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Investigation of Current Gain Degradation in 4H-SiC Power BJTs von Zetterling, Carl Mikael, Östling, Mikael, Buono, Benedetto, Domeij, Martin, Ghandi, Reza, Malm, B. Gunnar

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Current Gain Degradation in 4H-SiC Power BJTs von Domeij, Martin, Zetterling, Carl Mikael, Östling, Mikael, Buono, Benedetto, Ghandi, Reza, Malm, B. Gunnar

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Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology von Moens, Peter, Maslougkas, Sotirios, Allerstam, Fredrik, Domeij, Martin, Franchi, Jimmy, Choi, Jake, Lettens, Jan

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The \hbox^-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes von Lutz, J., Baburske, R., Min Chen, Heinze, B., Domeij, M., Felsl, H.-P., Schulze, H.-J.

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1200 V SiC MOSFETs with Stable VTH under High Temperature Gate Bias Stress von Lee, Kwang Won, Franchi, Jimmy, Domeij, Martin

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Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs von Domeij, Martin, Schöner, Adolf, Han, Ji Sheng, Zetterling, Carl Mikael, Buono, Benedetto, Ghandi, Reza, Dimitrijev, Sima, Östling, Mikael, Esteve, Romain, Reshanov, Sergey A.

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SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth von Wada, Ryota, Kuroi, Takashi, Maloušek, Roman, Sunkari, Swapna, Allerstam, Fredrik, Justice, Joshua, Chochol, Jan, Franchi, Jimmy, Domeij, Martin, Das, Hrishikesh, Gumaelius, Krister

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Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide von Buchholt, K., Ghandi, R., Domeij, M., Zetterling, C.-M., Lu, J., Eklund, P., Hultman, L., Spetz, A. Lloyd

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Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations von Domeij, Martin, Maslougkas, Sotirios, Neyer, Thomas, Kochoska, Sara, Hu, Xue Qing, Sunkari, Swapna, Pham, Thanh Toan, Das, Hrishikesh, Lee, Ho Jung, Justice, Joshua, Franchi, Jimmy

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TCAD Modeling of a 1200 V SiC MOSFET von Lee, Kwang Won, Domeij, Martin, Franchi, Jimmy, Buono, Benedetto

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Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors von Allerstam, Fredrik, Domeij, Martin, Buono, Benedetto, Gumaelius, Krister

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Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFET von Park, Kyeong Seok, Seo, Young Ho, Allerstam, Fredrik, Domeij, Martin, Neyer, Thomas, Lee, Taeseop, Lee, Kwang Won

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