High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors von Majumdar, A., Zhibin Ren, Sleight, J.W., Dobuzinsky, D., Holt, J.R., Venigalla, R., Koester, S.J., Haensch, W.

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Gate Length and Performance Scaling of Undoped-Body Extremely Thin SOI MOSFETs von Majumdar, A., Xinlin Wang, Kumar, A., Holt, J.R., Dobuzinsky, D., Venigalla, R., Ouyang, C., Koester, S.J., Haensch, W.

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A novel fingered stacked capacitor cell von NGUYEN, T, NGUYEN, S. V, DOBUZINSKY, D. M, CARL, D. A

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Evidence of a shallow junction formation from plasma enhanced chemical vapor deposition of boron nitride and silicon boron nitride von TUE NGUYEN, SON VAN NGUYEN, DOBUZINSKY, D. M

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High yielding self-aligned contact process for a 0.150-μm DRAM technology von RUPP, Thomas S, DOBUZINSKY, David, ZHIJIAN LU, SARDESAI, Viraj Y, LIU, Hang-Yip, MALDEI, Michael, FALTERMEIER, John, GAMBINO, Jeff

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High selectivity magnetically enhanced reactive ion etching of boron nitride films von COTE, D, NGUYEN, S, DOBUZINSKY, D, BASA, C, NEUREITHER, B

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New leakage mechanism in sub-5-nm oxynitride dielectrics von TUE NGUYEN, CARL, D. A, NGUYEN, V, DOBUNZINSKY, D. M, KOREJWA, J. W

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Embedded DRAM memory cell with additional patterning layer for improved strap formation von DOBUZINSKY DAVID M, NAEEM MUNIR D, CHENG KANGGUO, KIM BYEONG Y

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Methods for enhancing trench capacitance and trench capacitor von Cheng, Kangguo, Dobuzinsky, David M, Li, Xi

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EMBEDDED DRAM MEMORY CELL WITH ADDITIONAL PATTERNING LAYER FOR IMPROVED STRAP FORMATION von DOBUZINSKY DAVID M, NAEEM MUNIR D, CHENG KANGGUO, KIM BYEONG Y

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Embedded DRAM memory cell with additional patterning layer for improved strap formation von DOBUZINSKY DAVID M, NAEEM MUNIR D, CHENG KANGGUO, KIM BYEONG Y

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Ultra-Low Leakage Silicon-on-Insulator Technology for 65 nm Node and Beyond von Jin Cai, Majumdar, A., Dobuzinsky, D., Ning, T.H., Koester, S.J., Haensch, W.E.

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Vertical SOI trench SONOS cell von DOBUZINSKY DAVID M, HO HERBERT L, OTANI YOICHI, MANDELMAN JACK A

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Vertical SOI trench SONOS cell von Dobuzinsky, David M, Ho, Herbert L, Mandelman, Jack A, Otani, Yoichi

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Shallow trench isolation structure compatible with SOI embedded DRAM von Cheng, Kangguo, Naeem, Munir D, Dobuzinsky, David M, Kim, Byeong Y

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Shallow trench isolation structure compatible with SOI embedded DRAM von DOBUZINSKY DAVID M, NAEEM MUNIR D, CHENG KANGGUO, KIM BYEONG Y

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Vertical SOI trench SONOS cell von DOBUZINSKY DAVID M, HO HERBERT L, OTANI YOICHI, MANDELMAN JACK A

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Vertical SOI trench SONOS cell von Dobuzinsky, David M, Ho, Herbert L, Mandelman, Jack A, Otani, Yoichi

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Method for non-selective shallow trench isolation reactive ion etch for patterning hybrid-oriented devices compatible with high-performance highly-integrated logic devices von Costrini, Gregory, Dobuzinsky, David M, Kanarsky, Thomas S, Naeem, Munir D, Sheraw, Christopher D, Wise, Richard

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Method for non-selective shallow trench isolation reactive ion etch for patterning hybrid-oriented devices compatible with high-performance highly-integrated logic devices von COSTRINI GREGORY, DOBUZINSKY DAVID M, KANARSKY THOMAS S, WISE RICHARD, SHERAW CHRISTOPHER D, NAEEM MUNIR D

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