Evidence of a shallow junction formation from plasma enhanced chemical vapor deposition of boron nitride and silicon boron nitride von TUE NGUYEN, SON VAN NGUYEN, DOBUZINSKY, D. M

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A novel fingered stacked capacitor cell von NGUYEN, T, NGUYEN, S. V, DOBUZINSKY, D. M, CARL, D. A

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New leakage mechanism in sub-5-nm oxynitride dielectrics von TUE NGUYEN, CARL, D. A, NGUYEN, V, DOBUNZINSKY, D. M, KOREJWA, J. W

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Embedded DRAM memory cell with additional patterning layer for improved strap formation von DOBUZINSKY DAVID M, NAEEM MUNIR D, CHENG KANGGUO, KIM BYEONG Y

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Methods for enhancing trench capacitance and trench capacitor von Cheng, Kangguo, Dobuzinsky, David M, Li, Xi

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EMBEDDED DRAM MEMORY CELL WITH ADDITIONAL PATTERNING LAYER FOR IMPROVED STRAP FORMATION von DOBUZINSKY DAVID M, NAEEM MUNIR D, CHENG KANGGUO, KIM BYEONG Y

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Embedded DRAM memory cell with additional patterning layer for improved strap formation von DOBUZINSKY DAVID M, NAEEM MUNIR D, CHENG KANGGUO, KIM BYEONG Y

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Vertical SOI trench SONOS cell von Dobuzinsky, David M, Ho, Herbert L, Mandelman, Jack A, Otani, Yoichi

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Vertical SOI trench SONOS cell von DOBUZINSKY DAVID M, HO HERBERT L, OTANI YOICHI, MANDELMAN JACK A

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Shallow trench isolation structure compatible with SOI embedded DRAM von Cheng, Kangguo, Naeem, Munir D, Dobuzinsky, David M, Kim, Byeong Y

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Shallow trench isolation structure compatible with SOI embedded DRAM von DOBUZINSKY DAVID M, NAEEM MUNIR D, CHENG KANGGUO, KIM BYEONG Y

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Vertical SOI trench SONOS cell von DOBUZINSKY DAVID M, HO HERBERT L, OTANI YOICHI, MANDELMAN JACK A

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Vertical SOI trench SONOS cell von Dobuzinsky, David M, Ho, Herbert L, Mandelman, Jack A, Otani, Yoichi

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Method for non-selective shallow trench isolation reactive ion etch for patterning hybrid-oriented devices compatible with high-performance highly-integrated logic devices von COSTRINI GREGORY, DOBUZINSKY DAVID M, KANARSKY THOMAS S, WISE RICHARD, SHERAW CHRISTOPHER D, NAEEM MUNIR D

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Method for non-selective shallow trench isolation reactive ion etch for patterning hybrid-oriented devices compatible with high-performance highly-integrated logic devices von Costrini, Gregory, Dobuzinsky, David M, Kanarsky, Thomas S, Naeem, Munir D, Sheraw, Christopher D, Wise, Richard

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EMBEDDED DRAM MEMORY CELL WITH ADDITIONAL PATTERNING LAYER FOR IMPROVED STRAP FORMATION von DOBUZINSKY DAVID M, NAEEM MUNIR D, CHENG KANGGUO, KIM BYEONG Y

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Poly filled substrate contact on SOI structure von DOBUZINSKY DAVID M, LEOBANDUNG EFFENDI, TESSIER BRIAN L, NAEEM MUNIR D, KIM BYEONG Y

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Poly filled substrate contact on SOI structure von Dobuzinsky, David M, Kim, Byeong Y, Leobandung, Effendi, Naeem, Munir D, Tessier, Brian L

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VERTICAL SOI TRENCH SONOS CELL von DOBUZINSKY DAVID M, HO HERBERT L, OTANI YOICHI, MANDELMAN JACK A

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Formation of controlled sublithographic structures von DOBUZINSKY DAVID M, BEINTNER JOCHEN C, PANDA SIDDHARTHA

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