Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors von Dobaczewski, L., Peaker, A. R., Bonde Nielsen, K.

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Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi von Markevich, V. P., Hawkins, I. D., Peaker, A. R., Emtsev, K. V., Emtsev, V. V., Litvinov, V. V., Murin, L. I., Dobaczewski, L.

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Electronic properties of vacancy–oxygen complex in Ge crystals von Markevich, V. P., Hawkins, I. D., Peaker, A. R., Litvinov, V. V., Murin, L. I., Dobaczewski, L., Lindström, J. L.

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The antimony-vacancy defect in p -type germanium von Lindberg, C. E., Hansen, J. Lundsgaard, Bomholt, P., Mesli, A., Nielsen, K. Bonde, Larsen, A. Nylandsted, Dobaczewski, L.

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Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy von Kolkovsky, Vl, Dobaczewski, L., Nielsen, K. Bonde, Kolkovsky, V., Larsen, A. Nylandsted, Weber, J.

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Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study von Markevich, V.P., Peaker, A.R., Lastovskii, S.B., Murin, L.I., Litvinov, V.V., Emtsev, V.V., Dobaczewski, L.

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Laplace transform deep-level transient spectroscopic studies of defects in semiconductors von Dobaczewski, L., Kaczor, P., Hawkins, I. D., Peaker, A. R.

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E center in silicon has a donor level in the band gap von Larsen, A Nylandsted, Mesli, A, Nielsen, K Bonde, Nielsen, H Kortegaard, Dobaczewski, L, Adey, J, Jones, R, Palmer, D W, Briddon, P R, Oberg, S

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Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study von Capan, I., Pivac, B., Hawkins, I.D., Markevich, V.P., Peaker, A.R., Dobaczewski, L., Jačimović, R.

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Tilt and dislocations in epitaxial laterally overgrown GaAs layers von Zytkiewicz, Z. R., Domagala, J. Z., Dobosz, D., Dobaczewski, L., Rocher, A., Clement, C., Crestou, J.

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Trivacancy in silicon: A combined DLTS and ab-initio modeling study von Markevich, V.P., Peaker, A.R., Lastovskii, S.B., Murin, L.I., Coutinho, J., Markevich, A.V., Torres, V.J.B., Briddon, P.R., Dobaczewski, L., Monakhov, E.V., Svensson, B.G.

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Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys von Markevich, V.P., Peaker, A.R., Coutinho, J., Jones, R., Torres, V.J.B., Öberg, Sven, Briddon, P.R., Murin, L.I., Dobaczewski, L., Abrosimov, N.V.

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Capacitance spectroscopy of CdTe self-assembled quantum dots embedded in ZnTe matrix von Placzek-Popko, E., Zielony, E., Trzmiel, J., Szatkowski, J., Gumienny, Z., Wojtowicz, T., Karczewski, G., Kruszewski, P., Dobaczewski, L.

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Energy state distributions at oxide–semiconductor interfaces investigated by Laplace DLTS von Dobaczewski, L., Markevich, V.P., Kruszewski, P., Hawkins, I.D., Peaker, A.R.

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Relation between photocurrent and DLTS signals observed for quantum dot systems von Kruszewski, P., Dobaczewski, L., Mesli, A., Markevich, V.P., Mitchell, C., Missous, M., Peaker, A.R.

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Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys von Markevich, V.P., Dobaczewski, L., Bonde Nielsen, K., Litvinov, V.V., Petukh, A.N., Pokotilo, Yu.M., Abrosimov, N.V., Peaker, A.R.

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Electron- and hole-related electrical activity of InAs/GaAs quantum dots von Kruszewski, P., Dobaczewski, L., Markevich, V.P., Mitchell, C., Missous, M., Peaker, A.R.

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The vacancy–donor pair in unstrained silicon, germanium and SiGe alloys von Peaker, A R, Markevich, V P, Auret, F D, Dobaczewski, L, Abrosimov, N

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Point defects in SiGe alloys: structural guessing based on electronic transition analysis von Mesli, A., Kruszewski, P., Dobaczewski, L., Kolkovsky, Vl, Nylandsted Larsen, A., Abrosimov, N. V.

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Donor level of interstitial hydrogen in GaAs von Dobaczewski, L., Bonde Nielsen, K., Nylandsted Larsen, A., Peaker, A.R.

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