Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement von Guo, L., Wang, X. Q., Zheng, X. T., Yang, X. L., Xu, F. J., Tang, N., Lu, L. W., Ge, W. K., Shen, B., Dmowski, L. H., Suski, T.

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Advantage of In- over N-polarity for disclosure of p-type conduction in InN:Mg von Dmowski, L. H., Baj, M., Wang, X. Q., Zheng, X. T., Ma, D. Y., Kończewicz, L., Suski, T.

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Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities von Dmowski, L. H., Baj, M., Konczewicz, L., Suski, T., Maude, D. K., Grzanka, S., Wang, X. Q., Yoshikawa, A.

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Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer von Dmowski, L. H., Konczewicz, L., Suski, T., Contreras, S., Lu, H., Schaff, W. J.

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Electronic structure and effective masses of InN under pressure von Gorczyca, I., Plesiewicz, J., Dmowski, L., Suski, T., Christensen, N. E., Svane, A., Gallinat, C. S., Koblmueller, G., Speck, J. S.

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Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates von Suski, T., Staszczak, G., Grzanka, S., Czernecki, R., Litwin-Staszewska, E., Piotrzkowski, R., Dmowski, L. H., Khachapuridze, A., Kryśko, M., Perlin, P., Grzegory, I.

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Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior von Dmowski, L. H., Baj, M., Suski, T., Przybytek, J., Czernecki, R., Wang, X., Yoshikawa, A., Lu, H., Schaff, W. J., Muto, D., Nanishi, Y.

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Resonant localized donor state above the conduction band minimum in InN von Dmowski, L. H., Plesiewicz, J. A., Suski, T., Lu, Hai, Schaff, W., Kurouchi, M., Nanishi, Y., Konczewicz, L., Cimalla, V., Ambacher, O.

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Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy von Suski, T., Litwin-Staszewska, E., Piotrzkowski, R., Czernecki, R., Krysko, M., Grzanka, S., Nowak, G., Franssen, G., Dmowski, L. H., Leszczynski, M., Perlin, P., Łucznik, B., Grzegory, I., Jakieła, R.

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High pressure studies of radiative recombination mechanisms in InN von Suski, T., Franssen, G., Teisseyre, H., Khachapuridze, A., Dmowski, L. H., Plesiewicz, J. A., Kamińska, A., Lu, H., Schaff, W.

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Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy von Litwin-Staszewska, E., Piotrzkowski, R., Dmowski, L., Prystawko, P., Czernecki, R., Konczewicz, L.

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Parallel conduction in p-type gallium nitride homo-structures von Litwin-Staszewska, E, Konczewicz, L, Piotrzkowski, R, Dmowski, L, Czernecki, R, Prystawko, P

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Towards identification of localized donor states in InN von Plesiewicz, J, Suski, T, Dmowski, L, Walukiewicz, W, Yu, K M, Korman, A, Ratajczak, R, Stonert, A, Lu, Hai, Schaff, W

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Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies von Suski, T., Kamińska, A., Franssen, G., Teisseyre, H., Dmowski, L. H., Plesiewicz, J. A., Lu, H. L., Schaff, W. J., Kurouchi, M., Nanishi, Y.

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Band structure and effective mass of InN under pressure von Gorczyca, I., Dmowski, L., Plesiewicz, J., Suski, T., Christensen, N. E., Svane, A., Gallinat, C. S., Koblmueller, G., Speck, J. S.

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Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments von Dmowski, L. H., Dybko, K., Plesiewicz, J., Suski, T., Lu, H., Schaff, W., Kurouchi, M., Nanishi, Y., Konczewicz, L., Cimalla, V., Ambacher, O.

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Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures von Anceau, S., Lefebvre, P., Suski, T., Łepkowski, S. P., Teisseyre, H., Dmowski, L. H., Konczewicz, L., Kaminska, A., Suchocki, A., Hirayama, H., Aoyagi, Y.

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The variation of the pressure coefficient of manganin sensors at low temperatures von Dmowski, L H, Litwin-Staszewska, E

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Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies von Franssen, G., Suski, T., Perlin, P., Teisseyre, H., Khachapuridze, A., Dmowski, L. H., Plesiewicz, J. A., Kamińska, A., Kurouchi, M., Nanishi, Y., Lu, H., Schaff, W.

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Properties of InGaN blue laser diodes grown on bulk GaN substrates von Perlin, P., Suski, T., Leszczyński, M., Prystawko, P., Świetlik, T., Marona, Ł., Wiśniewski, P., Czernecki, R., Nowak, G., Weyher, J.L., Kamler, G., Borysiuk, J., Litwin-Staszewska, E., Dmowski, L., Piotrzkowski, R., Franssen, G., Grzanka, S., Grzegory, I., Porowski, S.

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