On the Control of the Fixed Charge Densities in Al2O3‑Based Silicon Surface Passivation Schemes von Simon, Daniel K, Jordan, Paul M, Mikolajick, Thomas, Dirnstorfer, Ingo

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Trapped charge densities in Al2O3-based silicon surface passivation layers von Jordan, Paul M., Simon, Daniel K., Mikolajick, Thomas, Dirnstorfer, Ingo

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Near surface inversion layer recombination in Al2O3 passivated n -type silicon von Dirnstorfer, Ingo, Simon, Daniel K., Jordan, Paul M., Mikolajick, Thomas

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BiasMDP: Carrier lifetime characterization technique with applied bias voltage von Jordan, Paul M., Simon, Daniel K., Mikolajick, Thomas, Dirnstorfer, Ingo

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Symmetrical Al2O3-based passivation layers for p- and n-type silicon von Simon, Daniel K., Jordan, Paul M., Dirnstorfer, Ingo, Benner, Frank, Richter, Claudia, Mikolajick, Thomas

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On the Control of the Fixed Charge Densities in Al 2 O 3 -Based Silicon Surface Passivation Schemes von Simon, Daniel K., Jordan, Paul M., Mikolajick, Thomas, Dirnstorfer, Ingo

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Atomic layer deposited high-κ nanolaminates for silicon surface passivation von Benner, Frank, Jordan, Paul M., Richter, Claudia, Simon, Daniel K., Dirnstorfer, Ingo, Knaut, Martin, Bartha, Johann W., Mikolajick, Thomas

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Interpretation of azimuthal angle dependence of periodic gratings in Mueller matrix spectroscopic ellipsometry von Heinrich, Anett, Bischoff, Jörg, Meiner, Kurt, Richter, Uwe, Mikolajick, Thomas, Dirnstorfer, Ingo

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Trapped charge densities in Al{sub 2}O{sub 3}-based silicon surface passivation layers von Jordan, Paul M., Simon, Daniel K., Dirnstorfer, Ingo, Mikolajick, Thomas, Chair of Nanoelectronic Materials, TU Dresden, D-01062 Dresden

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Symmetrical Al sub(2)O sub(3)-based passivation layers for p- and n-type silicon von Simon, Daniel K, Jordan, Paul M, Dirnstorfer, Ingo, Benner, Frank, Richter, Claudia, Mikolajick, Thomas

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Al2O3-TiO2 Nanolaminates for Conductive Silicon Surface Passivation von Dirnstorfer, Ingo, Chohan, Talha, Jordan, Paul M., Knaut, Martin, Simon, Daniel K., Bartha, Johann W., Mikolajick, Thomas

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Near surface inversion layer recombination in Al{sub 2}O{sub 3} passivated n-type silicon von Dirnstorfer, Ingo, Simon, Daniel K., Jordan, Paul M., Mikolajick, Thomas, TU Dresden, Institut für Halbleiter-und Mikrosystemtechnik

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Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering von Simon, Daniel K., Tröger, David, Schenk, Tony, Dirnstorfer, Ingo, Fengler, Franz P. G., Jordan, Paul M., Krause, Andreas, Mikolajick, Thomas

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Atomic layer deposition of anatase TiO2 on porous electrodes for dye-sensitized solar cells von Dirnstorfer, Ingo, Mähne, Hannes, Mikolajick, Thomas, Knaut, Martin, Albert, Matthias, Dubnack, Kristina

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2D Mapping of Chemical and Field Effect Passivation of Al2O3 on Silicon Substrates von Jordan, Paul M., Simon, Daniel K., Fengler, Franz P.G., Mikolajick, Thomas, Dirnstorfer, Ingo

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Low-thermal budget flash light annealing for Al sub(2)O sub(3) surface passivation von Simon, Daniel K, Henke, Thomas, Jordan, Paul M, Fengler, Franz PG, Mikolajick, Thomas, Bartha, Johann W, Dirnstorfer, Ingo

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Low‐thermal budget flash light annealing for Al 2 O 3 surface passivation von Simon, Daniel K., Henke, Thomas, Jordan, Paul M., Fengler, Franz P. G., Mikolajick, Thomas, Bartha, Johann W., Dirnstorfer, Ingo

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Al 2 O 3 -TiO 2 Nanolaminates for Conductive Silicon Surface Passivation von Dirnstorfer, Ingo, Chohan, Talha, Jordan, Paul M., Knaut, Martin, Simon, Daniel K., Bartha, Johann W., Mikolajick, Thomas

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Low-thermal budget flash light annealing for Al2O3 surface passivation von Simon, Daniel K., Henke, Thomas, Jordan, Paul M., Fengler, Franz P. G., Mikolajick, Thomas, Bartha, Johann W., Dirnstorfer, Ingo

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Via Hole Conditioning in Silicon Heterojunction metal Wrap through Solar Cells von Dirnstorfer, Ingo, Schilling, Niels, Koerner, Stefan, Gierth, Paul, Waltinger, Andreas, Leszczynska, Barbara, Simon, Daniel K., Gärtner, Jan, Jordan, Paul M., Mikolajick, Thomas, Dani, Ines, Eberstein, Markus, Rebenklau, Lars, Krause, Jens

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