Study of In0.53Ga0.47As/In0.52Al0.48As quantum wells on InP by spectroscopic ellipsometry and photoluminescence von DINGES, H. W, HILLMER, H, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

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Determination of ion beam etching damage on InP by spectroscopic ellipsometry von Dinges, H.W., Kempf, B., Burkhard, H., Göbel, R.

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Determination of refractive indexes of In0.52Al0.48As on InP in the wavelength range from 250 to 1900 nm by spectroscopic ellipsometry von DINGES, H. W, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

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Refractive indices of InAlAs and InGaAs/InP from 250 to 1900 nm determined by spectroscopic ellipsometry von Dinges, H.W., Burkhard, H., Lösch, R., Nickel, H., Schlapp, W.

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Composition and Refractive Index of Ga1--xAlxAs Determined by Ellipsometry von Kuphal, E, Dinges, H W

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Spectroscopic ellipsometry : a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47-xAs layers on InP in the wavelength range 280-19... von DINGES, H. W, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

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Spectroscopic ellipsometry : a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47-xAs on InP in the wavelength range from 280 to 1... von DINGES, H. W, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

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Determination of refractive indices of In0.53Al0.40Ga0.07As and In0.53Al0.11Ga0.36As on InP in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry von DINGES, H. W, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

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Determination of the refractive index of In0.53Al0.11Ga0.36As on InP in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry von DINGES, H. W, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

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Determination of sputter damage on InP by MAI ellipsometry von Dinges, H. W., Kempf, B., Burkhard, H.

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An ellipsometric study of SiO2/Si3N4 double layers on silicon produced by chemical vapour deposition von Dinges, H.W.

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Optical properties of anodic oxide films on GaAs by ellipsometry von Dinges, H.W.

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An Ellipsometric Study of SiO sub 2 /Si sub 3 Ni sub 4 Double Layers on Silicon Produced by Chemical Vapour Deposition von Dinges, H W

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Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In sub 0 sub . sub 5 sub 2 Al sub 0 sub . sub 4 sub 8 As and In sub 0 sub . sub 5 su... von Dinges, H W, Burkhard, H, Losch, R, Nickel, Hubertus, Schlapp, W

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Determination of refractive indices of In sub(0.53)Al sub(0.40)Ga sub(0.07)As and In sub(0.53)Al sub(0.11)Ga sub(0.36)As on InP in the wavelength range from 280 to 1900 nm by spect... von Dinges, H W, Burkhard, H, Losch, R, Nickel, H, Schlapp, W

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Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In sub(0.52)Al sub(0.48)As and In sub(0.53)Al sub(x)Ga sub(0.47-x) As layers on InP... von Dinges, H W, Burkhard, H, Losch, R, Nickel, H, Schlapp, W

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Composition and refractive index of Ga1− x Al x As determined by ellipsometry von Kuphal, E., Dinges, H. W.

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Optical properties of In1− x Ga x P1− y As y , InP, GaAs, and GaP determined by ellipsometry von Burkhard, H., Dinges, H. W., Kuphal, E.

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RF-Sputtering of Silicon Nitride Layers on GaAs Substrates: Characterization of an Intermediate Layer Between the Substrate and the Deposited Film von Kaufmann, L. M. F., Tilders, R., Heime, K., Dinges, H. W.

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Education Outcomes in a Duty-Hour Flexibility Trial in Internal Medicine von Desai, Sanjay V, Asch, David A, Bellini, Lisa M, Chaiyachati, Krisda H, Liu, Manqing, Sternberg, Alice L, Tonascia, James, Yeager, Alyssa M, Asch, Jeremy M, Katz, Joel T, Basner, Mathias, Bates, David W, Bilimoria, Karl Y, Dinges, David F, Even-Shoshan, Orit, Shade, David M, Silber, Jeffrey H, Small, Dylan S, Volpp, Kevin G, Shea, Judy A

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