A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications von Liu, Chunsen, Yan, Xiao, Song, Xiongfei, Ding, Shijin, Zhang, David Wei, Zhou, Peng

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Validity of Prandtl layer expansions for steady magnetohydrodynamics over a rotating disk von Ding, Shijin, Wang, Cuiyu

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Tunable SnSe2/WSe2 Heterostructure Tunneling Field Effect Transistor von Yan, Xiao, Liu, Chunsen, Li, Chao, Bao, Wenzhong, Ding, Shijin, Zhang, David Wei, Zhou, Peng

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Multiple-Degree-of-Freedom Modeling and Simulation for Seismic-Grade Sigma-Delta MEMS Capacitive Accelerometers von Wang, Xuefeng, Zhang, Penghao, Ding, Shijin

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A Study on the Harmonic Distortion of Seismic-Grade Sigma-Delta MEMS Accelerometers Using a Multiple Degree-of-Freedom Model von Wang, Xuefeng, Zhang, Penghao, Ding, Shijin

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Low sub-threshold swing realization with contacts of graphene/h-BN/MoS2 heterostructures in MoS2 transistors von Li, Chao, Yan, Xiao, Bao, Wenzhong, Ding, Shijin, Zhang, David Wei, Zhou, Peng

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Global Weak Solutions for 1D Compressible Navier–Stokes/Allen–Cahn System with Vacuum von Li, Yinghua, Yan, Yuanxiang, Ding, Shijin, Chen, Gaoyang

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Synthesis and resistive switching characteristics of polyimides derived from 2,7-aryl substituents tetraphenyl fluorene diamines von Yang, Yanhua, Xia, Jingcheng, Ding, Zijun, Zheng, Youxuan, Ding, Shijin, Shen, Yingzhong

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Global classical solutions to the 2D compressible Navier-Stokes equations with vacuum von Ding, Shijin, Huang, Bingyuan, Liu, Xiaoling

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Charge‐Trap Memory Based on Hybrid 0D Quantum Dot–2D WSe2 Structure von Hou, Xiang, Zhang, Heng, Liu, Chunsen, Ding, Shijin, Bao, Wenzhong, Zhang, David Wei, Zhou, Peng

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Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level von Shen, Yan, Yang, Songbo, Zhou, Peng, Sun, Qingqing, Wang, Pengfei, Wan, Li, Li, Jing, Chen, Liangyao, Wang, Xianbao, Ding, Shijin, Zhang, David Wei

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Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region von Li, Lianjie, Zhu, Bao, Wu, Xiaohan, Ding, Shijin

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Global well-posedness for the dynamical Q-tensor model of liquid crystals von Huang, JinRui, Ding, ShiJin

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Stability Analysis for the Incompressible Navier–Stokes Equations with Navier Boundary Conditions von Ding, Shijin, Li, Quanrong, Xin, Zhouping

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MRI-based brain tumor segmentation using FPGA-accelerated neural network von Xiong, Siyu, Wu, Guoqing, Fan, Xitian, Feng, Xuan, Huang, Zhongcheng, Cao, Wei, Zhou, Xuegong, Ding, Shijin, Yu, Jinhua, Wang, Lingli, Shi, Zhifeng

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Operation mode switchable charge-trap memory based on few-layer MoS2 von Hou, Xiang, Yan, Xiao, Liu, Chunsen, Ding, Shijin, Zhang, David Wei, Zhou, Peng

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Correction to: Stability Analysis for the Incompressible Navier–Stokes Equations with Navier Boundary Conditions von Ding, Shijin, Li, Quanrong, Xin, Zhouping

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Synthesis and memory characteristics of polyimides containing noncoplanar aryl pendant groups von Li, Yueqin, Chu, Yueying, Fang, Runchen, Ding, Shijin, Wang, Yulong, Shen, Yingzhong, Zheng, Anmin

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Enhanced dissipation and transition threshold for the 2-D plane Poiseuille flow via resolvent estimate von Ding, Shijin, Lin, Zhilin

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A Method for Fast Au-Sn Bonding at Low Temperature Using Thermal Gradient von Wang, Wenchao, Liu, Ziyu, Qiu, Delong, Zhu, Zhiyuan, Yan, Na, Ding, Shijin, Zhang, David Wei

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