Trapping effects and microwave power performance in AlGaN/GaN HEMTs von Binari, S.C., Ikossi, K., Roussos, J.A., Kruppa, W., Doewon Park, Dietrich, H.B., Koleske, D.D., Wickenden, A.E., Henry, R.L.

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H, He, and N implant isolation of n-type GaN von Binari, S. C., Dietrich, H. B., Kelner, G., Rowland, L. B., Doverspike, K., Wickenden, D. K.

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Patterning of the Drosophila embryo by a homeodomain-deleted Ftz polypeptide von Copeland, John W. R, Nasiadka, Andrzej, Dietrich, Bruce H, Krause, Henry M

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AlSb/InAs HEMT's for low-voltage, high-speed applications von Boos, J.B., Kruppa, W., Bennett, B.R., Park, D., Kirchoefer, S.W., Bass, R., Dietrich, H.B.

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Photoluminescence and magnetic resonance studies of Er3+ in MeV ion-implanted GaAs von KLEIN, P. B, MOORE, F. G, DIETRICH, H. B

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Fabrication and characterization of GaN FETs von Binari, S.C., Kruppa, W., Dietrich, H.B., Kelner, G., Wickenden, A.E., Freitas, J.A.

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GaN FETs for microwave and high-temperature applications von Binari, Steven C., Doverspike, K., Kelner, G., Dietrich, H.B., Wickenden, A.E.

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High-energy Si implantation into InP:Fe von NADELLA, R. K, RAO, M. V, SIMONS, D. S, CHI, P. H, FATEMI, M, DIETRICH, H. B

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Observation of ion-implantation-damage-created n-type conductivity in InP after high-temperature annealing von MOLNAR, B, KENNEDY, T. A, GLASER, E. R, DIETRICH, H. B

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tantalus, a potential link between Notch signalling and chromatin-remodelling complexes von Dietrich, Bruce H, Yang, Ping, Krause, Henry M

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Silicon implantation into GaAs : observations of dose rate dependent electrical activation and damage von MOORE, F. G, DIETRICH, H. B, DOBISZ, E. A, HOLLAND, O. W

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In0.53Ga0.47As metal-semiconductor-metal photodetector using proton bombarded p -type material von Rao, Mulpuri V., Hong, W-P., Caneau, C., Chang, G-K., Papanicolaou, N., Dietrich, H. B.

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Development and characterization of zone melt growth GaAs for gamma-ray detectors von King, S.E., Dietrich, H.B., Henry, R.L., Katzer, D.S., Moore, W.J., Phillips, G.W., Mania, R.C.

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Site transfer of Si in GaAs after heavy ion MeV implantation and annealing von MOORE, F. G, KLEIN, P. B, DIETRICH, H. B

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Tantalus, a Novel ASX-Interacting Protein with Tissue-Specific Functions von Dietrich, Bruce H., Moore, Jocelyn, Kyba, Michael, dosSantos, Gilbert, McCloskey, Fiona, Milne, Thomas A., Brock, Hugh W., Krause, Henry M.

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Dual implants in InGaAs von RAO, M. V, MOORE, F, DIETRICH, H. B

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MeV Be implantation in GaAs von RAO, M. V, THOMPSON, P. E, DIETRICH, H. B, SIMONS, D. S

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Implantation damage in GaAs-AlAs superlattices of different layer thickness von Dobisz, E. A., Fatemi, M., Dietrich, H. B., McCormick, A. W., Harbison, J. P.

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Diamond metal-semiconductor-metal ultraviolet photodetectors von Binari, S.C., Marchywka, M., Koolbeck, D.A., Dietrich, H.B., Moses, D.

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Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions von DE LYON, T. J, CASEY, H. C. JR, MASSOUD, H. Z, TIMMONS, M. L, HUTCHBY, J. A, DIETRICH, H. B

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