The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs von Esposto, Michele, Lecce, Valerio Di, Bonaiuti, Matteo, Chini, Alessandro

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Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains von Grassi, Roberto, Gnudi, Antonio, Di Lecce, Valerio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation von Di Lecce, Valerio, Grassi, Roberto, Gnudi, Antonio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Simulation of Graphene Base Transistors With Bilayer Tunnel Oxide Barrier: Model Calibration and Performance Projection von Di Lecce, Valerio, Gnudi, Antonio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications von Pesic, Milan, Larcher, Luca, Mikolajick, Thomas, Li, Taide, Di Lecce, Valerio, Hoffmann, Michael, Materano, Monica, Richter, Claudia, Max, Benjamin, Slesazeck, Stefan, Schroeder, Uwe

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Semianalytical quantum model for graphene field-effect transistors von Pugnaghi, Claudio, Grassi, Roberto, Gnudi, Antonio, Di Lecce, Valerio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation von Chini, A., Di Lecce, V., Fantini, F., Meneghesso, G., Zanoni, E.

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Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress von Di Lecce, Valerio, Esposto, Michele, Bonaiuti, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Fantini, Fausto, Chini, Alessandro

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Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation von Di Lecce, Valerio, Grassi, Roberto, Gnudi, Antonio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Simulations of Graphene Base Transistors With Improved Graphene Interface Model von Di Lecce, Valerio, Gnudi, Antonio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics von Di Lecce, Valerio, Grassi, Roberto, Gnudi, Antonio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation von Chini, A., Di Lecce, V., Esposto, M., Meneghesso, G., Zanoni, E.

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Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback von Grassi, Roberto, Gnudi, Antonio, Valerio Di Lecce, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains von Grassi, Roberto, Gnudi, Antonio, Valerio Di Lecce, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Semianalytical quantum model for graphene field-effect transistors von Pugnaghi, Claudio, Grassi, Roberto, Gnudi, Antonio, Valerio Di Lecce, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

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Going Ballistic: Graphene Hot Electron Transistors von Vaziri, Sam, Smith, Anderson D, Östling, Mikael, Lupina, Grzegorz, Dabrowski, Jarek, Lippert, Gunther, Driussi, Francesco, Venica, Stefano, Valerio Di Lecce, Gnudi, Antonio, König, Matthias, Ruhl, Günther, Belete, Melkamu, Lemme, Max C

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An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters von Di Lecce, Valerio, Esposto, Michele, Bonaiuti, Matteo, Fantini, Fausto, Meneghesso, Gaudenzio, Zanoni, Enrico, Chini, Alessandro

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Study of GaN HEMTs electrical degradation by means of numerical simulations von Di Lecce, V, Esposto, M, Bonaiuti, M, Fantini, F, Chini, A

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An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters: Group III Nitride... von DI LECCE, Valerio, ESPOSTO, Michele, BONAIUTI, Matteo, FANTINI, Fausto, MENEGHESSO, Gaudenzio, ZANONI, Enrico, CHINI, Alessandro

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RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements von Chini, A., Di Lecce, V., Esposto, M., Meneghesso, G., Zanoni, E.

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