Extreme dielectric strength in boron doped homoepitaxial diamond von Volpe, Pierre-Nicolas, Muret, Pierre, Pernot, Julien, Omnès, Franck, Teraji, Tokuyuki, Koide, Yasuo, Jomard, François, Planson, Dominique, Brosselard, Pierre, Dheilly, Nicolas, Vergne, Bertrand, Scharnholz, Sigo

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High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer von Volpe, Pierre-Nicolas, Muret, Pierre, Pernot, Julien, Omnès, Franck, Teraji, Tokuyuki, Jomard, François, Planson, D., Brosselard, Pierre, Dheilly, Nicolas, Vergne, Bertrand, Scharnholtz, Sigo

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Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique von Raynaud, Christophe, Tournier, Dominique, ul Hassan, Jawad, Montserrat, Josep, Brosselard, Pierre, Bevilacqua, Pascal, Morel, Hervé, Dheilly, Nicolas, Planson, Dominique

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High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension von Paques, G., Scharnholz, S., Dheilly, N., Planson, D., De Doncker, R. W.

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Light triggered 4HaSiC thyristors with an etched guard ring assisted JTE von Dheilly, Nicolas, Planson, Dominique, PAcques, Gontran, Scharnholz, Sigo

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Pulse Characterization of Optically Triggered SiC Thyristors von Scharnholz, Sigo, Dheilly, Nicolas, Pâques, Gontran, Planson, Dominique

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Optical triggering of SiC thyristors using UV LEDs von DHEILLY, N, PAQUES, G, SCHARNHOLZ, S, BEVILACQUA, P, RAYNAUD, C, NGUYEN, D.-M, DE DONCKER, R. W, PLANSON, D

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Experimental determination of impact ionization coefficients in 4H-SiC von Nguyen, D.M., Raynaud, C., Dheilly, N., Lazar, M., Tournier, D., Brosselard, P., Planson, D.

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Light triggered 4H–SiC thyristors with an etched guard ring assisted JTE von Dheilly, Nicolas, Planson, Dominique, Pâques, Gontran, Scharnholz, Sigo

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Parallel and Serial Association of SiC Light Triggered Thyristors von Scharnholz, Sigo, Planson, Dominique, Dheilly, Nicolas, Pâques, Gontran

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Comparison of SiC Thyristors with Differently Etched JTEs von Scharnholz, Sigo, De Doncker, Rik W., Pâques, Gontran, Dheilly, Nicolas, Planson, Dominique

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Graded Etched Junction Termination for SiC Thyristors von Scharnholz, Sigo, De Doncker, Rik W., Pâques, Gontran, Dheilly, Nicolas, Planson, Dominique

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OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients von Raynaud, Christophe, Tournier, Dominique, Lazar, Mihai, Scharnholz, Sigo, Nguyen, D.M., Pâques, Gontran, Dheilly, Nicolas, Planson, Dominique

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Optical beam induced current measurements: principles and applications to SiC device characterization von Raynaud, Christophe, Nguyen, Duy-Minh, Dheilly, Nicolas, Tournier, Dominique, Brosselard, Pierre, Lazar, Mihai, Planson, Dominique

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Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED von Bevilacqua, Pascal, Scharnholz, Sigo, Dheilly, Nicolas, Pâques, Gontran, Planson, Dominique

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Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height von Konrath, Jens Peter, Scharnholz, Sigo, De Doncker, Rik W., Pâques, Gontran, Dheilly, Nicolas, Planson, Dominique

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Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection von Raynaud, Christophe, Konrath, Jens Peter, Tournier, Dominique, Scharnholz, Sigo, Nguyen, Duy Minh, Pâques, Gontran, Dheilly, Nicolas, Planson, Dominique

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Optical beam induced applications and materials science current measurements: principles and applications to SiC device characterization von RAYNAUD, Christophe, NGUYEN, Duy-Minh, DHEILLY, Nicolas, TOURNIER, Dominique, BROSSELARD, Pierre, LAZAR, Mihai, PLANSON, Dominique

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Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique von Dheilly, Nicolas, Planson, Dominique, Brosselard, Pierre, Ul Hassan, Jawad, Bevilacqua, Pascal, Tournier, Dominique, Montserrat, Josep, Raynaud, Christophe, Morel, Hervé

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Conception et optimisation de thyristors optiques en carbure de silicium pour des applications d'électronique impulsionnelle von Dheilly, Nicolas

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