Topical Drifts in Intelligent Computing: Proceedings of International Conference on Computational Techniques and Applications (ICCTA 2021) von Mandal, Jyotsna Kumar, Hsiung, Pao-Ann, Sankar Dhar, Rudra

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Exploration and Analysis of Temperature and Performance of Compound Semiconductor-Based Junctionless GAA FET von Batakala, Jeevanarao, Sankar Dhar, Rudra, Kumar, Kuleen, Biswas, Arindam, Mallik, Saurav, Ahmad, Naim, Ghribi, Wade, Said Badawy, Ahmed

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The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length von Saha, Priyanka, Sankar Dhar, Rudra, Nanda, Swagat, Kumar, Kuleen, Alathbah, Moath

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Exploration of effects of gate underlap in HOI FinFETs at 10 nm gate length von Datta, Parabi, Nanda, Swagat, Sankar Dhar, Rudra

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Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance von Barik, Rasmita, Dhar, Rudra Sankar, Hussein, Mousa I.

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Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances von Barik, Rasmita, Dhar, Rudra Sankar, Awwad, Falah, Hussein, Mousa I.

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Evolution in Signal Processing and Telecommunication Networks: Proceedings of 8th International Conference on Microelectronics Electromagnetics and Telecommunications (ICMEET 2023) von Bhateja, Vikrant, Chowdary, P. Satish Rama, Flores-Fuentes, Wendy, Urooj, Shabana, Sankar Dhar, Rudra

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Design of DG MOSFET with Tri-Layered Strained Silicon Channel von Kumar, Kuleen, Khiangte, Lalthanpuii, Sankar Dhar, Rudra

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Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance von Das, Dipshika, Dhar, Rudra Sankar, Ghosh, Pradip Kumar, Sharma, Yash, Banerjee, Amit

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Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel von Yugender, Potaraju, Dhar, Rudra Sankar, Nanda, Swagat, Kumar, Kuleen, Sakthivel, Pandurengan, Thirumurugan, Arun

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Development and Analysis of Graphene-Sheet-Based GaAs Schottky Solar Cell for Enriched Efficiency von Phimu, L Kholee, Dhar, Rudra Sankar, Singh, Khomdram Jolson, Banerjee, Amit

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Dielectric Modulated Charge Plasma-Based Label Free Detection of Biomolecules in Dual Metal DG TFET Biosensors von Das, Dipshika, Sankar Dhar, Rudra, Kumar Ghosh, Pradip, Biswas, Arindam, Mallik, Saurav, Ahmad, Naim, Ghribi, Wade

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Design and Exploration by Quantum Chemical Analysis of Photosensitizers Having [D−π–π–A]- and [D-D-triad-A]-Type Molecular Structure Models for DSSC von Kargeti, Ankit, Dhar, Rudra Sankar, Siddiqui, Shamoon Ahmad, Saleh, Na’il

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Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System von Nanda, Swagat, Dhar, Rudra Sankar, Awwad, Falah, Hussein, Mousa I

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Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy von Khan, Sahanowaj, Acharyya, Aritra, Inokawa, Hiroshi, Satoh, Hiroaki, Biswas, Arindam, Dhar, Rudra Sankar, Banerjee, Amit, Seteikin, Alexey Y.

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Evolution and performance analysis of quantum well FinFET for 3 nm technology node with type-II strained tri-layered hetero-channel system von Nanda, Swagat, Dhar, Rudra Sankar

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Exploration of improved leakage based performance analysis for underlap induced strained-Si layer in tri-layered channel DG nanoFETs von Kumar, Kuleen, Dhar, Rudra Sankar

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Fabrication and analysis of emerging electrochromic nanomaterial membrane device for smart applications von Talukdar, Silpee, Dhar, Rudra Sankar

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Development of Tri‐Layered s‐Si/s‐SiGe/s‐Si Channel Heterostructure‐on‐Insulator MOSFET for Enhanced Drive Current von Khiangte, Lalthanpuii, Dhar, Rudra Sankar

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Exploration and development of tri-gate quantum well barrier FinFET with strained nanosystem channel for enhanced performance von Nanda, Swagat, Dhar, Rudra Sankar

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