Method for forming uniaxially strained devices von Zhang, Da, Dhandapani, Veer, Goolsby, Brian, Nguyen, Bich-Yen

Volltext bestellen

Selective silicon deposition for planarized dual surface orientation integration von Spencer, Gregory S, Beckage, Peter J, Sadaka, Mariam G, Dhandapani, Veer

Volltext bestellen

Selective silicon deposition for planarized dual surface orientation integration von SPENCER GREGORY S, DHANDAPANI VEER, BECKAGE PETER J, SADAKA MARIAM G

Volltext bestellen

Method for making a semiconductor device with strain enhancement von Zhang, Da, Nguyen, Bich-Yen, Thean, Voon-Yew, Shiho, Yasuhito, Dhandapani, Veer

Volltext bestellen

Method for making a semiconductor device with strain enhancement von THEAN VOON-YEW, NGUYEN BICH-YEN, ZHANG DA, SHIHO YASUHITO, DHANDAPANI VEER

Volltext bestellen

Selective silicon deposition for planarized dual surface orientation integration von SPENCER GREGORY S, DHANDAPANI VEER, BECKAGE PETER J, SADAKA MARIAM G

Volltext bestellen

Method for forming uniaxially strained devices von NGUYEN BICH-YEN, GOOLSBY BRIAN, ZHANG DA, DHANDAPANI VEER

Volltext bestellen

Method for forming uniaxially strained devices von NGUYEN BICH-YEN, GOOLSBY BRIAN, ZHANG DA, DHANDAPANI VEER

Volltext bestellen

Method for making a semiconductor device with strain enhancement von THEAN VOON-YEW, NGUYEN BICH-YEN, ZHANG DA, SHIHO YASUHITO, DHANDAPANI VEER

Volltext bestellen

Factors influencing the threshold voltages of metal oxide CMOS devices von HOBBS, Christopher, FONSECA, Leonardo, HEGDE, Rama, TSENG, Hsing, WHITE, Bruce, TOBIN, Phil, SAMAVEDAM, Sri, GRANT, John, DHANDAPANI, Veer, TAYLOR, Bill, DIP, Lurae, TRIYOSO, Dina, GILMER, David, SCHAEFFER, Jamie

Volltext

New Materials, Processes and Device Structures for 65nm CMOS Technology Node and Beyond von Nguyen, Bich-Yen, Thean, Aaron, Zhang, Da, White, Ted, Sadaka, Mariam, Triyoso, Dina, Schaeffer, Jamie, Goolsby, Brian, Nguyen, Thien, Dhandapani, Veer, Vartanian, Victor, McCormick, Linda, Theodore, David, Zollner, Stefan, Xie, Qianghau, Wang, Xiang-Dong, Shi, Zhanghai, Mathew, Leo, Zavala, Melissa, Parker, Colita, Collard, Heather, Hildreth, Jill, Prabhu, Lata, Rai, Raghaw, Murphy, Sharon, Montgomery, Patrick, Kalpat, Sriram, Ramon, Michael, Gilmer, David, Taylor, Bill, Demkov, Alex, Adams, Vance, Jiang, Jack, Chen, Jian, Chang, Cheng-Hung, Kaushik, Vidya, Chandna, Luna, Sadd, Mike, Barr, Alex, Vandooren, Anne, Pham, Daniel, Mendicino, Mike, Cheek, Jon, Tseng, Hsing, White, Bruce, Tobin, Phil, Orlowski, Marius, Venkatesan, Suresh, Kolagunta, Venkat, Mogab, Joe, Canonico, M., Kottke, M.

Volltext

Integration challenges of new materials and device architectures for IC applications von Bich-Yen Nguyen, Thean, A., White, T., Vandooren, A., Sadaka, M., Mathew, L., Barr, A., Thomas, S., Zalava, M., Da Zhang, Eades, D., Zhong-Hai Shi, Schaeffer, J., Triyoso, D., Samavedam, S., Vartanian, V., Stephen, T., Goolsby, B., Zollner, S., Liu, R., Noble, R., Thien Nguyen, Dhandapani, V., Xie, B., Xang-Dong Wang, Jiang, J., Rai, R., Sadd, M., Ramon, M., Kalpat, S., Prabhu, L., Kaushik, V., Du, Y., Dao, T., Mendicino, M., Orlowski, M., Tobin, P., Mogab, J., Venkatesan, S.

Volltext bestellen

Poly-Si gate CMOS with hafnium silicate gate dielectric von HOBBS, Christopher, GRANT, John, FRANKE, Andrea, GARCIA, Ricardo, HEBERT, Liz, AZRAK, Marijean, SING, David, STEPHENS, Tab, SCROGUM, Carl, RAI, Raghaw, BECNEL, Virginia, CONNER, Jim, KHER, Shreyas, WHITE, Bruce, TOBIN, Phil, DHANDAPANI, Veer, TAYLOR, Bill, DIP, Lurae, HEGDE, Rama, METZNER, Craig, HSING TSENG, GILMER, David

Volltext