Estimation of fixed charge densities in hafnium-silicate gate dielectrics von Kaushik, V.S., O'Sullivan, B.J., Pourtois, G., Van Hoornick, N., Delabie, A., Van Elshocht, S., Deweerd, W., Schram, T., Pantisano, L., Rohr, E., Ragnarsson, L.-A., De Gendt, S., Heyns, M.

Volltext

Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy von Rittersma, Z. M., Hooker, J. C., Vellianitis, G., Locquet, J.-P., Marchiori, C., Sousa, M., Fompeyrine, J., Pantisano, L., Deweerd, W., Schram, T., Rosmeulen, M., De Gendt, S., Dimoulas, A.

Volltext

Nucleation and growth behavior of atomic layer deposited HfO2 films on silicon oxide starting surfaces von Nyns, L, Hall, L, Conard, T, Delabie, A, Deweerd, W, Heyns, M, Van Elshocht, S, Van Hoornick, N, Vinckier, C, De Gendt, S

Volltext

Characterization of mixed-signal properties of MOSFETs with high-k (SiON/HfSiON/TaN) gate stacks von Rittersma, Z.M., Vertregt, M., Deweerd, W., van Elshocht, S., Srinivasan, P., Simoen, E.

Volltext

Effect of nitridation on low-frequency (1/f) noise in n- and p-mosfets with HFO2 gate dielectrics von Srinivasan, P, Simoen, E, Rittersma, Z M, Deweerd, W, Pantisano, L, Ciaeys, C, Misra, D

Volltext

Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors von SCHRAM, T, RAGNARSSON, L.-A, DE MEYER, K, DE GENDT, S, HEYNS, M, LUJAN, G, DEWEERD, W, CHEN, J, TSAI, W, HENSON, K, LANDER, R. J. P, HOOKER, J. C, VERTOMMEN, J

Volltext

Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI von Aoulaiche, M., Houssa, M., Deweerd, W., Trojman, L., Conard, T., Maes, J.W., De Gendt, S., Groeseneken, G., Maes, H.E., Heyns, M.M.

Volltext

Electrical and physical characterization of remote plasma oxidized HfO/sub 2/ gate dielectrics von Yamamoto, K., Deweerd, W., Aoulaiche, M., Houssa, M., De Gendt, S., Horii, S., Asai, M., Sano, A., Hayashi, S., Niwa, M.

Volltext

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks von LI, Z, SCHRAM, T, DEWEERD, W, NAOKI, Y, LEHNEN, P, DE GENDT, S, DE MEYER, K, PANTISANO, L, STESMANS, A, CONARD, T, SHAMUILIA, S, AFANASIEV, V. V, AKHEYAR, A, VAN ELSHOCHT, S, BRUNCO, D. P

Volltext

PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application von Yamamoto, K., Kubicek, S., Rothschild, A., Mitsuhashi, R., Deweerd, W., Veloso, A., Jurczak, M., Biesemans, S., De Gendt, S., Wickramanayaka, S., Hayashi, S., Niwa, M.

Volltext

Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey von DEWEERD, W, KAUSHIK, V, DE GENDT, S, HEYNS, M, CHEN, J, SHIMAMOTO, Y, SCHRAM, T, RAGNARSSON, L.-A, DELABIE, A, PANTISANO, L, EYCKENS, B, MAES, J. W

Volltext

Potential remedies for the V T/ V fb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey von Deweerd, W., Kaushik, V., Chen, J., Shimamoto, Y., Schram, T., Ragnarsson, L.-Å., Delabie, A., Pantisano, L., Eyckens, B., Maes, J.W., De Gendt, S., Heyns, M.

Volltext

Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks von Claes, Martine, Kraus, H., De Gendt, Stefan, Boullart, Werner, Deweerd, W., Garaud, Sylvain, Snow, James, Demand, M., Beckx, S., Paraschiv, Vasile, Vos, Rita

Volltext

Wafer Backside Cleaning Strategies for High-k/Metal Gate Processing von Kraus, H., Garaud, Sylvain, Shamiryan, Denis, Deweerd, W., Lux, Marcel, Vos, Rita, Catana, Gabriela, DeGendt, S., Snow, James, Kesters, Els, Schram, T., Mertens, Paul W., De Waele, R., Kenis, Karine

Volltext

A combined Mössbauer and Rutherford backscattering spectroscopy analysis of the influence of nanosized cavities on CoSi2 formation von Deweerd, W., Moons, R., Verheyden, J., Milants, K., Langouche, G., Pattyn, H.

Volltext

Ion channeling study of cavities in silicon formed by He implantation von Moons, R., Deweerd, W., Pattyn, H., Vantomme, A., Langouche, G.

Volltext

Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface von Li, Z., Schram, T., Pantisano, L., Conard, T., Van Elshocht, S., Deweerd, W., De Gendt, S., De Meyer, K., Stesmans, A., Shamuilia, S., Afanas’ev, V. V., Akheyar, A., Brunco, D. P., Yamada, N., Lehnen, P.

Volltext

Size distribution and magnetic behavior of lead inclusions in silicon single crystals von Milants, K., Verheyden, J., Barancira, T., Deweerd, W., Pattyn, H., Bukshpan, S., Williamson, D. L., Vermeiren, F., Van Tendeloo, G., Vlekken, C., Libbrecht, S., Van Haesendonck, C.

Volltext

Mössbauer study of the proximity gettering of cobalt atoms to He-induced nanosized voids in c-Si von Deweerd, W, Barancira, T, Bukshpan, S, Demuynck, S, Langouche, G, Milants, K, Moons, R, Verheyden, J, Pattyn, H

Volltext

Study of the trapping of CoFe impurities at the internal wall of nanosized Si voids von Deweerd, W., Barancira, T., Langouche, G., Milants, K., Moons, R., Verheyden, J., Pattyn, H.

Volltext