Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes von Ando, Yuto, Xu, Zhiyu, Detchprohm, Theeradetch, Young, Preston, Dupuis, Russell D.

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Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction von Sun, Haiding, Park, Young Jae, Li, Kuang-Hui, Torres Castanedo, C. G., Alowayed, Abdulmohsen, Detchprohm, Theeradetch, Dupuis, Russell D., Li, Xiaohang

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On the reliable analysis of indium mole fraction within InxGa1−xN quantum wells using atom probe tomography von Riley, James R., Detchprohm, Theeradetch, Wetzel, Christian, Lauhon, Lincoln J.

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Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes von Jeong, Hoon, Cho, Minkyu, Xu, Zhiyu, Mehnke, Frank, Otte, Nepomuk, Shen, Shyh-Chiang, Detchprohm, Theeradetch, Dupuis, Russell D.

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Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates von Li, Xiao-Hang, Detchprohm, Theeradetch, Kao, Tsung-Ting, Satter, Md. Mahbub, Shen, Shyh-Chiang, Douglas Yoder, P., Dupuis, Russell D., Wang, Shuo, Wei, Yong O., Xie, Hongen, Fischer, Alec M., Ponce, Fernando A., Wernicke, Tim, Reich, Christoph, Martens, Martin, Kneissl, Michael

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High 400 °C operation temperature blue spectrum concentration solar junction in GaInN/GaN von Zhao, Liang, Detchprohm, Theeradetch, Wetzel, Christian

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Influence of TMAl preflow on AlN epitaxy on sapphire von Sun, Haiding, Wu, Feng, Park, Young Jae, Al tahtamouni, T. M., Li, Kuang-Hui, Alfaraj, Nasir, Detchprohm, Theeradetch, Dupuis, Russell D., Li, Xiaohang

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Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness von Mehnke, Frank, Fischer, Alec M., Xu, Zhiyu, Bouchard, Henri, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Ponce, Fernando A., Dupuis, Russell D.

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Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate von Li, Xiao-Hang, Kao, Tsung-Ting, Satter, Md. Mahbub, Wei, Yong O., Wang, Shuo, Xie, Hongen, Shen, Shyh-Chiang, Yoder, P. Douglas, Fischer, Alec M., Ponce, Fernando A., Detchprohm, Theeradetch, Dupuis, Russell D.

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Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping von Xu, Zhiyu, Daeumer, Matthias A., Cho, Minkyu, Yoo, Jae-Hyuck, Detchprohm, Theeradetch, Bakhtiary-Noodeh, Marzieh, Shao, Qinghui, Laurence, Ted A., Key, Daryl, Letts, Edward, Hashimoto, Tadao, Dupuis, Russell D., Shen, Shyh-Chiang

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Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells von Li, Xiaohang, Xie, Hongen, Ponce, Fernando A., Ryou, Jae-Hyun, Detchprohm, Theeradetch, Dupuis, Russell D.

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Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors von Detchprohm, Theeradetch, Liu, Yuh-Shiuan, Mehta, Karan, Wang, Shuo, Xie, Hongen, Kao, Tsung-Ting, Shen, Shyh-Chiang, Yoder, Paul D., Ponce, Fernando A., Dupuis, Russell D.

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Breakdown characteristics of deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiodes von Jeong, Hoon, Cho, Minkyu, Xu, Zhiyu, Mehnke, Frank, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Otte, Nepomuk, Dupuis, Russell D.

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Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation von Daeumer, Matthias, Yoo, Jae-Hyuck, Xu, Zhiyu, Cho, Minkyu, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Zhang, Yuxuan, Thirupakuzi Vangipuram, Vijay Gopal, Talesara, Vishank, Xu, Yibo, Letts, Edward, Key, Daryl, Li, Tian T., Shao, Qinghui, Dupuis, Russell, Shen, Shyh-Chiang, Lu, Wu, Zhao, Hongping, Hashimoto, Tadao, Laurence, Ted A.

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Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency von Wetzel, Christian, Detchprohm, Theeradetch

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Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow von Wang, Shuo, Li, Xiaohang, Fischer, Alec M., Detchprohm, Theeradetch, Dupuis, Russell D., Ponce, Fernando A.

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Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors von Kao, Tsung-Ting, Liu, Yuh-Shiuan, Mahbub Satter, Md, Li, Xiao-Hang, Lochner, Zachary, Douglas Yoder, P., Detchprohm, Theeradetch, Dupuis, Russell D., Shen, Shyh-Chiang, Ryou, Jae-Hyun, Fischer, Alec M., Wei, Yong, Xie, Hongen, Ponce, Fernando A.

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High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation von Bakhtiary-Noodeh, Marzieh, Cho, Minkyu, Jeong, Hoon, Xu, Zhiyu, Tsou, Chuan-Wei, Cao, Can, Shen, Shyh-Chiang, Detchprohm, Theeradetch, Dupuis, Russell D.

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Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures von Chen, Ping, Park, Young Jae, Liu, Yuh-Shiuan, Detchprohm, Theeradetch, Yoder, P. Douglas, Shen, Shyh-Chiang, Dupuis, Russell D.

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Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays von Mi-Hee Ji, Jeomoh Kim, Detchprohm, Theeradetch, Dupuis, Russell D., Sood, Ashok K., Dhar, Nibir K., Lewis, Jay

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