Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition von Deshpande, Sadanand V., Gulari, Erdogan, Brown, Steven W., Rand, Stephen C.

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Tuning patterning conditions by co-adsorption of gases: Br{sub 2} and H{sub 2} on Si(001) von Biswas, Sananda, Narasimhan, Shobhana, Deshpande, Sadanand V., Dunn, Derren N.

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Ayurvedic deodorant talc with Hemidesmus indicus and Shankhajeerak von Munot, Archana D, Dr Sadanand V Deshpande, Joshi, Mohan R

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HOT FILAMENT ASSISTED DEPOSITION OF SILICON-NITRIDE THIN-FILMS von DESHPANDE, SV, DUPUIE, JL, GULARI, E

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Advanced junction formation for sub-32nm logic devices von Deshpande, Sadanand V, Ozcan, Ahmet, Wall, Donald, Eunha Kim, Gluschenkov, Oleg

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High Performance 65nm SOI Transistors Using Laser Spike Annealing von Yamashita, T., Fisher, P.A., Gluschenkov, O., Kimura, H., Ramachandran, R., Mocuta, A.C., Kluth, J., Kawamura, T., Onishi, K., Fried, D., Narasimha, S., Brown, D., Sameer Jain, Miyamoto, K., Freeman, G., Deshpande, S.V., Luning, S., Shih-Fen Huang, Pellerin, J., Kuroda, H.

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Liposome-Encapsulated Hemoglobin using Film Hydration Processing to form Artificial Red Blood Cells von Deshpande, Sadanand V., Beissinger, Richard L.

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Dual pulse driven extreme ultraviolet (EUV) radiation source method von Deshpande Sadanand V, Gluschenkov Oleg, Deshpande Veeresh V, Krishnan Sivarama, Corliss Daniel A

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DUAL PULSE DRIVEN EXTREME ULTRAVIOLET (EUV) RADIATION SOURCE von GLUSCHENKOV OLEG, CORLISS DANIEL A, DESHPANDE VEERESH V, KRISHNAN SIVARAMA, DESHPANDE SADANAND V

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Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas von GLUSCHENKOV OLEG, CORLISS DANIEL A, DESHPANDE VEERESH V, KRISHNAN SIVARAMA, DESHPANDE SADANAND V

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DUAL PULSE DRIVEN EXTREME ULTRAVIOLET (EUV) RADIATION SOURCE UTILIZING A DROPLET COMPRISING A METAL CORE WITH DUAL CONCENTRIC SHELLS OF BUFFER GAS von GLUSCHENKOV OLEG, CORLISS DANIEL A, DESHPANDE VEERESH V, KRISHNAN SIVARAMA, DESHPANDE SADANAND V

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Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug von Wagner, Tina J, Rausch, Werner A, Deshpande, Sadanand V

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Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug von WAGNER TINA J, RAUSCH WERNER A, DESHPANDE SADANAND V

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Method for producing a doped nitride film, doped oxide film and other doped films von HOLT JUDSON, CHAN KEVIN K, JAGANNATHAN RANGARAJAN, CHAKRAVARTI ASHIMA B, DESHPANDE SADANAND V

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Method for patterning a semiconductor region von Deshpande, Sadanand V, Ranade, Rajiv M, Worth, George K

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A MANUFACTURABLE METHOD AND STRUCTURE FOR DOUBLE SPACER CMOS WITH OPTIMIZED NFET/PFET PERFORMANCE von TESSIER BRIAN L, SCHEPIS DOMINIC J, DESHPANDE SADANAND V

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STI stress modification by nitrogen plasma treatment for improving performance in small width devices von DORIS BRUCE B, SLINKMAN JAMES A, RAUSCH WERNER A, DESHPANDE SADANAND V

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STI stress modification by nitrogen plasma treatment for improving performance in small width devices von Deshpande, Sadanand V, Doris, Bruce B, Rausch, Werner A, Slinkman, James A

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Method of forming an electronic device on a recess in the surface of a thin film of silicon etched to a precise thickness von WAGNER TINA J, RAUSCH WERNER A, DESHPANDE SADANAND V

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Method of forming an electronic device on a recess in the surface of a thin film of silicon etched to a precise thickness von Rausch, Werner A, Wagner, Tina J, Deshpande, Sadanand V

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