A micro-electro-mechanical accelerometer based on gallium nitride on silicon von Morelle, C., Théron, D., Roch-Jeune, I., Tilmant, P., Okada, E., Vaurette, F., Grimbert, B., Derluyn, J., Degroote, S., Germain, M., Faucher, M.

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Vertical breakdown of GaN on Si due to V-pits von Besendörfer, S., Meissner, E., Tajalli, A., Meneghini, M., Freitas, J. A., Derluyn, J., Medjdoub, F., Meneghesso, G., Friedrich, J., Erlbacher, T.

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Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate von Medjdoub, F., Derluyn, J., Cheng, K., Leys, M., Degroote, S., Marcon, D., Visalli, D., Van Hove, M., Germain, M., Borghs, G.

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Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer von Derluyn, J., Boeykens, S., Cheng, K., Vandersmissen, R., Das, J., Ruythooren, W., Degroote, S., Leys, M. R., Germain, M., Borghs, G.

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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth von Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmik, J.

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Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability von Capriotti, M., Alexewicz, A., Fleury, C., Gavagnin, M., Bethge, O., Visalli, D., Derluyn, J., Wanzenböck, H. D., Bertagnolli, E., Pogany, D., Strasser, G.

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Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers von Cheng, Kai, Leys, M., Degroote, S., Van Daele, B., Boeykens, S., Derluyn, J., Germain, M., Van Tendeloo, G., Engelen, J., Borghs, G.

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Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design von Das, J., Oprins, H., Hangfeng Ji, Sarua, A., Ruythooren, W., Derluyn, J., Kuball, M., Germain, M., Borghs, G.

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The role of Al on Ohmic contact formation on n -type GaN and AlGaN ∕ GaN von Van Daele, B., Van Tendeloo, G., Ruythooren, W., Derluyn, J., Leys, M. R., Germain, M.

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Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection von Malinowski, P.E., John, J., Duboz, J.Y., Hellings, G., Lorenz, A., Madrid, J.G.R., Sturdevant, C., Cheng, K., Leys, M., Derluyn, J., Das, J., Germain, M., Minoglou, K., De Moor, P., Frayssinet, E., Semond, F., Hochedez, J.-F., Giordanengo, B., Mertens, R.

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AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation von KAI CHENG, DEGROOTE, S, LEYS, M, MEDJDOUB, F, DERLUYN, J, SIJMUS, B, GERMAIN, M, BORGHS, G

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Growth and characterization of unintentionally doped GaN grown on silicon(1 1 1) substrates von Leys, M., Cheng, Kai, Derluyn, J., Degroote, S., Germain, M., Borghs, G., Taylor, C.A., Dawson, P.

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AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4 von KAI CHENG, LEYS, M, DERLUYN, J, DEGROOTE, S, XIAO, D. P, LORENZ, A, BOEYKENS, S, GERMAIN, M, BORGHS, G

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AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE von Cheng, Kai, Leys, M., Derluyn, J., Balachander, K., Degroote, S., Germain, M., Borghs, G.

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Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTs von Xiao, Dongping, Schreurs, Dominique, De Raedt, W., Derluyn, J., Germain, M., Nauwelaers, B., Borghs, G.

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Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistors von Van Daele, B., Van Tendeloo, G., Derluyn, J., Shrivastava, P., Lorenz, A., Leys, M. R., Germain, M.

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Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPE von Cheng, Kai, Degroote, S., Leys, M., Medjdoub, F., Derluyn, J., Sijmus, B., Germain, M., Borghs, G.

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Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors von Derluyn, J., Dessein, K., Flamand, G., Mols, Y., Poortmans, J., Borghs, G., Moerman, I.

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Growth of InN on Ge(1 1 1) by molecular beam epitaxy using a GaN buffer von Lieten, R.R., Degroote, S., Leys, M., Derluyn, J., Kuijk, M., Borghs, G.

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Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment von Borga, M., Meneghini, M., Benazzi, D., Canato, E., Püsche, R., Derluyn, J., Abid, I., Medjdoub, F., Meneghesso, G., Zanoni, E.

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