Punch-through in short-channel AlGaN/GaN HFETs von Uren, M.J., Nash, K.J., Balmer, R.S., Martin, T., Morvan, E., Caillas, N., Delage, S.L., Ducatteau, D., Grimbert, B., De Jaeger, J.C.

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HEMT Average Temperature Determination Utilizing Low-Power Device Operation von Florovic, M., Kovac, J., Chvala, A., Kovac, J., Jacquet, J.-C, Delage, S.L.

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AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz von Sarazin, N., Morvan, E., di Forte Poisson, M.A., Oualli, M., Gaquiere, C., Jardel, O., Drisse, O., Tordjman, M., Magis, M., Delage, S.L.

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Average Temperature Determination of AlGaN/GaN HEMT Utilizing Pinch-Off Voltage Biasing von Florovic, M., Kovac, J., Chvala, A., Kovac, J., Jacquet, J. -C., Delage, S. L.

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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources von El Fatimy, A., Dyakonova, N., Meziani, Y., Otsuji, T., Knap, W., Vandenbrouk, S., Madjour, K., Théron, D., Gaquiere, C., Poisson, M. A., Delage, S., Prystawko, P., Skierbiszewski, C.

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Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor von Florovi, M, Ková, J, Ková, J, Chvála, A, Weis, M, Jacquet, J-C, Delage, S L

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Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT von Florovi, M, Szobolovszký, R, Ková, J, Ková, J, Chvála, A, Jacquet, J-C, Delage, S L

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ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT von Aubry, R., Jacquet, J. C., Oualli, M., Patard, O., Piotrowicz, S., Chartier, E., Michel, N., Trinh Xuan, L., Lancereau, D., Potier, C., Magis, M., Gamarra, P., Lacam, C., Tordjman, M., Jardel, O., Dua, C., Delage, S. L.

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Low density shear viscosity of Lennard-Jones chains of variable rigidities von Santacreu, S Delage, Galliero, G, Odunlami, M, Boned, C

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AlGaN/GaN HEMT channel temperature determination utilizing external heater von Florovi, M, Szobolovszký, R, Ková, J, Ková, J, Chvála, A, Jacquet, J-C, Delage, S L

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In Situ NMR Measurements of Vapor Deposited Ice von Lisitsin-Baranovsky, E, Delage, S, Sucre, O, Ofer, O, Ayotte, P, Alexandrowicz, G

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Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures von Nsele, S. D., Escotte, L., Tartarin, J.-G., Piotrowicz, S., Delage, S. L.

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Diamond overgrown InAlN/GaN HEMT von Alomari, M., Dipalo, M., Rossi, S., Diforte-Poisson, M.-A., Delage, S., Carlin, J.-F., Grandjean, N., Gaquiere, C., Toth, L., Pecz, B., Kohn, E.

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Compact modelling of InAlN/GaN HEMT for low noise applications von Sakalas, P, Šimukovič, A, Piotrowicz, S, Jardel, O, Delage, S L, Mukherjee, A, Matulionis, A

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L'impact de la crise sanitaire sur le recours au SAMU von Delage, S., Delort, L.

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Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate von Ducatteau, D., Minko, A., Hoel, V., Morvan, E., Delos, E., Grimbert, B., Lahreche, H., Bove, P., Gaquiere, C., De Jaeger, J.C., Delage, S.

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Getting the Predoc Back Into Documentation: Students as Scribes During Their Clerkship von Delage, Bryan S, Sherman, Kamille, Halaas, Gwen, Johnson, Eric L

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Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors von Kováč, J., Šatka, A., Chvála, A., Donoval, D., Kordoš, P., Delage, S.

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Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films von Duquenne, C., Tessier, P. Y., Besland, M. P., Angleraud, B., Jouan, P. Y., Aubry, R., Delage, S., Djouadi, M. A.

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A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications von Sozza, A., Dua, C., Morvan, E., Grimber, B., Delage, S.L.

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