Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress von Wu, Y., Chen, C.-Y., del Alamo, J. A.

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InGaAs Quantum-Well MOSFET Arrays for Nanometer-Scale Ohmic Contact Characterization von Lin, J., Antoniadis, D. A., del Alamo, J. A.

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Asymmetric gating for reducing leakage current in carbon nanotube field-effect transistors von Srimani, T., Hills, G., Zhao, X., Antoniadis, D., del Alamo, J. A., Shulaker, M. M.

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A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs von Lin, J., Zhao, X., Clavero, I. Manglano, Antoniadis, D. A., del Alamo, J. A.

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Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices von El Kazzi, S., Alian, A., Hsu, B., Favia, P., Merckling, C., Lu, W., del Alamo, J. A., Collaert, N.

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A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs von Vardi, A., Lin, J., Lu, W., Zhao, X., Fernando-Saavedra, A., del Alamo, J. A.

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Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode von El Kazzi, S., Alian, A., Hsu, B., Verhulst, A.S., Walke, A., Favia, P., Douhard, B., Lu, W., del Alamo, J.A., Collaert, N., Merckling, C.

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Far-infrared photon-induced current in a quantum point contact von WYSS, R. A, EUGSTER, C. C, DEL ALAMO, J. A, QING HU

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors von Jungwoo Joh, del Alamo, J A

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Stress-related hydrogen degradation of 0.1-μm InP HEMTs and GaAs PHEMTs von BLANCHARD, Roxann R, DEL ALAMO, J. A

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A 10 nm MOSFET concept von Appenzeller, J, Martel, R, Solomon, P, Chan, K, Avouris, Ph, Knoch, J, Benedict, J, Tanner, M, Thomas, S, Wang, K.L, del Alamo, J.A

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An insulator-lined silicon substrate-via technology with high aspect ratio von Wu, J.H., Scholvin, J., Del Alamo, J.A.

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Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT's von del Alamo, J.A., Somerville, M.H.

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A through-wafer interconnect in silicon for RFICs von Wu, J.H., Scholvin, J., del Alamo, J.A.

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InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance von KIM, T.-W, KIM, D.-H, DEL ALAMO, J. A

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GaN HEMT reliability von del Alamo, J.A., Joh, J.

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A physical model for the kink effect in InAlAs/InGaAs HEMTs von Somerville, M.H., Ernst, A., del Alamo, J.A.

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Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator von Kim, D.-H., del Alamo, J. A., Antoniadis, D. A., Li, J., Kuo, J.-M., Pinsukanjana, P., Kao, Y.-C., Chen, P., Papavasiliou, A., King, C., Regan, E., Urteaga, M., Brar, B., Kim, T.-W.

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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors von Jungwoo Joh, del Alamo, J.A.

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Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon von Fiorenza, J.G., del Alamo, J.A.

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