RADIO RELAY DEVICE AND RADIO COMMUNICATION SYSTEM von KOKUBU JIRO, DEKI TAKAHIRO

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CHANNEL SELECTION CONTROL DEVICE OF RADIO EQUIPMENT von DEKI TAKAHIRO

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JPH05301544 von DEKI TAKAHIRO, MIYAZAKI TSUNEJI

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WARNING DEVICE von TAMADA SHIGEHISA, KIYOMITSU ATSUSHI, DEKI TAKAHIRO, KUSUHARA KAZUHIRO, KURODA TOSHIO

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POWER SUPPLY CIRCUIT FOR ON-VEHICLE ELECTRONIC EQUIPMENT von TAMADA SHIGEHISA, KIYOMITSU ATSUSHI, DEKI TAKAHIRO, KURODA TOSHIO

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VEHICLE ABNORMALITY REPORT SYSTEM von YOKOGAWA KAZUHIRO, YUGAWA SEIKI, MIYAZAKI TSUNEYA, DEKI TAKAHIRO, KUSUHARA KAZUHIRO, TAGI TOMOTSUGU, SHIROTANI AKIO, YAMASHITA AKIFUMI, MASUDA YUKIO, KIRIMOTO MITSUNORI, MASUISHI NORIYUKI

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Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors von Deki, Manato, Makino, Takahiro, Iwamoto, Naoya, Onoda, Shinobu, Kojima, Kazutoshi, Tomita, Takuro, Ohshima, Takeshi

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Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes von Makino, Takahiro, Deki, Manato, Iwamoto, Naoya, Onoda, Shinobu, Hoshino, Norihiro, Tsuchida, Hidekazu, Hirao, Toshio, Ohshima, Takeshi

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Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs von Makino, Takahiro, Ohshima, Takeshi, Tomita, Takuro, Deki, Manato, Kojima, Kazutoshi

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Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes von Onoda, Shinobu, Makino, Takahiro, Tsuchida, Hidekazu, Deki, Manato, Hoshino, Norihiro, Ohshima, Takeshi

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Femtosecond-Laser-Induced Defects on Silicon Carbide Probed by Electrical Conductivity von Tomita, Takuro

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Enhancement of local electrical conductivities in SiC by femtosecond laser modification von Deki, Manato, Ito, Takuto, Yamamoto, Minoru, Tomita, Takuro, Matsuo, Shigeki, Hashimoto, Shuichi, Kitada, Takahiro, Isu, Toshiro, Onoda, Shinobu, Ohshima, Takeshi

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Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide von Deki, Manato, Makino, Takahiro, Tomita, Takuro, Oka, Tomoki, Takayoshi, Shodai, Naoi, Yoshiki, Ohshima, Takeshi

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Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses von Deki, Manato, Kojima, Kazutoshi, Makino, Takahiro, Tomita, Takuro, Ohshima, Takeshi

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Enhancement of local electrical conductivities in SiC by femtosecondlaser modification von Deki, Manato, Ito, Takuto, Yamamoto, Minoru, Tomita, Takuro, Matsuo, Shigeki, Hashimoto, Shuichi, Kitada, Takahiro, Isu, Toshiro, Onoda, Shinobu, Ohshima, Takeshi

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Electrical Conduction Properties of SiC Modified by Femtosecond Laser von Ito, Takuto Ito

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Critical Electric Field in Ion Irradiated 4H-SiC MOSFETs von Deki, Manato, Makino, Takahiro, Tomita, Takuro, Kojima, Kazutoshi, Ohshima, Takeshi

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Study of anomalous charge collection mechanisms in 4H-SiC SBD von Makino, Takahiro, Deki, Manato, Onoda, Shinobu, Hoshino, Norihiro, Tsuchida, Hidekazu, Ohshima, Takeshi

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Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas on Silicon Carbide von Oka, Tomoki, Deki, Manato, Naoi, Yoshiki, Makino, Takahiro, Ohshima, Takeshi, Tomita, Takuro

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Digital City for Disaster Reduction: Development of Pictogram System for Disaster Management von Hayashi, Haruo, Tanaka, Satoshi, Urabe, Kazunori, Yoshida, Haruhide, Inoue, Satoshi, Shima, Hideki, Deki, Nobuhisa, Kasagi, Jun, Nishino, Takahiro, Takashima, Masasuke

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