Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current von Usami, Shigeyoshi, Mayama, Norihito, Toda, Kazuya, Tanaka, Atsushi, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate von Usami, Shigeyoshi, Ando, Yuto, Tanaka, Atsushi, Nagamatsu, Kentaro, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Sugawara, Yoshihiro, Yao, Yong-Zhao, Ishikawa, Yukari

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Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces von Ando, Yuto, Nagamatsu, Kentaro, Deki, Manato, Taoka, Noriyuki, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Nakamura, Tohru, Amano, Hiroshi

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Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy von Ohnishi, Kazuki, Fujimoto, Naoki, Nitta, Shugo, Watanabe, Hirotaka, Lu, Shun, Deki, Manato, Honda, Yoshio, Amano, Hiroshi

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Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg von Lu, Shun, Deki, Manato, Wang, Jia, Ohnishi, Kazuki, Ando, Yuto, Kumabe, Takeru, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic von Lu, Shun, Deki, Manato, Kumabe, Takeru, Wang, Jia, Ohnishi, Kazuki, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers von Matsukura, Yusuke, Inazu, Tetsuhiko, Pernot, Cyril, Shibata, Naoki, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Amano, Hiroshi

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Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars von Sato, Shin-ichiro, Li, Shuo, Greentree, Andrew D., Deki, Manato, Nishimura, Tomoaki, Watanabe, Hirotaka, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Gibson, Brant C., Ohshima, Takeshi

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Experimental demonstration of GaN IMPATT diode at X-band von Kawasaki, Seiya, Ando, Yuto, Deki, Manato, Watanabe, Hirotaka, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Arai, Manabu, Amano, Hiroshi

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Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching von Kumabe, Takeru, Ando, Yuto, Watanabe, Hirotaka, Deki, Manato, Tanaka, Atsushi, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on... von Usami, Shigeyoshi, Tanaka, Atsushi, Fukushima, Hayata, Ando, Yuto, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions von Jadhav, Aakash, Ozawa, Takashi, Baratov, Ali, Asubar, Joel T., Kuzuhara, Masaaki, Wakejima, Akio, Yamashita, Shunpei, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi, Roy, Sourajeet, Sarkar, Biplab

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Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth von Ye, Zheng, Nitta, Shugo, Nagamatsu, Kentaro, Fujimoto, Naoki, Kushimoto, Maki, Deki, Manato, Tanaka, Atsushi, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi

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Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors von Uemura, Keisuke, Deki, Manato, Honda, Yoshio, Amano, Hiroshi, Sato, Taketomo

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Morphological study of InGaN on GaN substrate by supersaturation von Liu, Zhibin, Nitta, Shugo, Robin, Yoann, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi

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Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature von Takahashi, Masahiro, Tanaka, Atsushi, Ando, Yuto, Watanabe, Hirotaka, Deki, Manato, Kushimoto, Maki, Nitta, Shugo, Honda, Yoshio, Shima, Kohei, Kojima, Kazunobu, Chichibu, Shigefusa F., Chen, Kevin J., Amano, Hiroshi

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Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching von Yamada, Takehiro, Ando, Yuto, Watanabe, Hirotaka, Furusawa, Yuta, Tanaka, Atsushi, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Suda, Jun, Amano, Hiroshi

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Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency von Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ranjan, Kumud, Ng, Geok Ing, Murmu, Peter P, Kennedy, John, Nitta, Shugo, Honda, Yoshio, Deki, Manato, Amano, Hiroshi

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Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy von Liu, Zhibin, Nitta, Shugo, Usami, Shigeyoshi, Robin, Yoann, Kushimoto, Maki, Deki, Manato, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi

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Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes von Usami, Shigeyoshi, Miyagoshi, Ryosuke, Tanaka, Atsushi, Nagamatsu, Kentaro, Kushimoto, Maki, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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