Enhanced Properties in Single-Walled Carbon Nanotubes Based Saturable Absorber for All Optical Signal Regeneration von Nong, Hanond, Gicquel-Guézo, Maud, Bramerie, Laurent, Perrin, Mathieu, Grillot, Frédéric, Fleurier, Romain, Liang, Baolai, Huffaker, Diana L., Levallois, Christophe, Pouliquen, Julie Le, Corre, Alain Le, Dehaese, Olivier, Loualiche, Slimane

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Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster von Quinci, T., Kuyyalil, J., Thanh, T. Nguyen, Wang, Y. Ping, Almosni, S., Létoublon, A., Rohel, T., Tavernier, K., Chevalier, N., Dehaese, O., Boudet, N., Bérar, J.F., Loualiche, S., Even, J., Bertru, N., Corre, A. Le, Durand, O., Cornet, C.

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High-gain and low-threshold InAs quantum-dot lasers on InP von Caroff, P., Paranthoen, C., Platz, C., Dehaese, O., Folliot, H., Bertru, N., Labbé, C., Piron, R., Homeyer, E., Le Corre, A., Loualiche, S.

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X-ray study of antiphase domains and their stability in MBE grown GaP on Si von Létoublon, A., Guo, W., Cornet, C., Boulle, A., Véron, M., Bondi, A., Durand, O., Rohel, T., Dehaese, O., Chevalier, N., Bertru, N., Le Corre, A.

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Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen von Robert, C., Bondi, A., Thanh, T. Nguyen, Even, J., Cornet, C., Durand, O., Burin, J. P., Jancu, J. M., Guo, W., Létoublon, A., Folliot, H., Boyer-Richard, S., Perrin, M., Chevalier, N., Dehaese, O., Tavernier, K., Loualiche, S., Le Corre, A.

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23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers von Klaime, K, Calò, C, Piron, R, Paranthoen, C, Thiam, D, Batte, T, Dehaese, O, Le Pouliquen, J, Loualiche, S, Le Corre, A, Merghem, K, Martinez, A, Ramdane, A

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Carrier relaxation dynamics in InAs∕InP quantum dots von Miska, P., Even, J., Dehaese, O., Marie, X.

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Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots von Miska, P., Even, J., Marie, X., Dehaese, O.

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Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 $\mu$m von Azouigui, S., Dagens, B., Lelarge, F., Provost, J.-G., Make, D., Le Gouezigou, O., Accard, A., Martinez, A., Merghem, K., Grillot, F., Dehaese, O., Piron, R., Loualiche, S., Qin Zou, Ramdane, A.

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Study of the characteristics of 1.55 μ m quantum dash/dot semiconductor lasers on InP substrate von Zhou, D., Piron, R., Grillot, F., Dehaese, O., Homeyer, E., Dontabactouny, M., Batte, T., Tavernier, K., Even, J., Loualiche, S.

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Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique von Zhou, D., Piron, R., Dontabactouny, M., Dehaese, O., Grillot, F., Batte, T., Tavernier, K., Even, J., Loualiche, S.

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Awareness among French healthcare workers of the transmission of multidrug resistant organisms: a large cross-sectional survey von Vaillant, L, Birgand, G, Esposito-Farese, M, Astagneau, P, Pulcini, C, Robert, J, Zahar, J R, Sales-Wuillemin, E, Tubach, F, Lucet, J C

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As surface segregation during the growth of GaInP on GaAs von DEHAESE, O, WALLART, X, SCHULER, O, MOLLOT, F

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Enhancement of the polarization stability of a 155 µm emitting vertical-cavity surface-emitting laser under modulation using quantum dashes von Gauthier, J.-P., Paranthoën, C., Levallois, C., Shuaib, A., Lamy, J.-M., Folliot, H., Perrin, M., Dehaese, O., Chevalier, N., Durand, O., Le Corre, A.

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Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD von Pedesseau, L, Even, J, Bondi, A, Guo, W, Richard, S, Folliot, H, Labbe, C, Cornet, C, Dehaese, O, Le Corre, A, Durand, O, Loualiche, S

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Photonics based on carbon nanotubes von Gu, Qingyuan, Gicquel-Guézo, Maud, Loualiche, Slimane, Pouliquen, Julie Le, Batte, Thomas, Folliot, Hervé, Dehaese, Olivier, Grillot, Frederic, Battie, Yann, Loiseau, Annick, Liang, Baolai, Huffaker, Diana

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Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy von ZHOU, D, PIRON, R, DONTABACTOUNY, M, DEHAESE, O, GRILLOT, F, BATTE, T, TAVERNIER, K, EVEN, J, LOUALICHE, S

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Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates von Caroff, P., Bertru, N., Platz, C., Dehaese, O., Le Corre, A., Loualiche, S.

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Polarization control of 1.6 µm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP(001) von Lamy, Jean-Michel, Paranthoën, Cyril, Levallois, Christophe, Nakkar, Abdulhadi, Folliot, Hervé, Gauthier, Jean-Philippe, Dehaese, Olivier, Le Corre, Alain, Loualiche, Slimane

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Dynamic properties of InAs/InP(311B) quantum dot Fabry-Perot lasers emitting at 1.52-μm von Martinez, Anthony, Merghem, Kamel, Bouchoule, Sophie, Moreau, Gautier, Ramdane, Abderrahim, Provost, Jean-Guy, Alexandre, Francois, Grillot, Frédéric, Dehaese, Olivier, Piron, Rozenn, Loualiche, Slimane

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