High-gain and low-threshold InAs quantum-dot lasers on InP von Caroff, P., Paranthoen, C., Platz, C., Dehaese, O., Folliot, H., Bertru, N., Labbé, C., Piron, R., Homeyer, E., Le Corre, A., Loualiche, S.

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Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster von Quinci, T., Kuyyalil, J., Thanh, T. Nguyen, Wang, Y. Ping, Almosni, S., Létoublon, A., Rohel, T., Tavernier, K., Chevalier, N., Dehaese, O., Boudet, N., Bérar, J.F., Loualiche, S., Even, J., Bertru, N., Corre, A. Le, Durand, O., Cornet, C.

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X-ray study of antiphase domains and their stability in MBE grown GaP on Si von Létoublon, A., Guo, W., Cornet, C., Boulle, A., Véron, M., Bondi, A., Durand, O., Rohel, T., Dehaese, O., Chevalier, N., Bertru, N., Le Corre, A.

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23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers von Klaime, K, Calò, C, Piron, R, Paranthoen, C, Thiam, D, Batte, T, Dehaese, O, Le Pouliquen, J, Loualiche, S, Le Corre, A, Merghem, K, Martinez, A, Ramdane, A

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Carrier relaxation dynamics in InAs∕InP quantum dots von Miska, P., Even, J., Dehaese, O., Marie, X.

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Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm von Paranthoen, C., Bertru, N., Dehaese, O., Le Corre, A., Loualiche, S., Lambert, B., Patriarche, G.

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Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 $\mu$m von Azouigui, S., Dagens, B., Lelarge, F., Provost, J.-G., Make, D., Le Gouezigou, O., Accard, A., Martinez, A., Merghem, K., Grillot, F., Dehaese, O., Piron, R., Loualiche, S., Qin Zou, Ramdane, A.

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Vertical electronic coupling between InAs∕InP quantum-dot layers emitting in the near-infrared range von Miska, P., Even, J., Paranthoen, C., Dehaese, O., Jbeli, A., Senès, M., Marie, X.

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Kinetic model of element III segregation during molecular beam epitaxy of III-III′-V semiconductor compounds von Dehaese, O., Wallart, X., Mollot, F.

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Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD von Pedesseau, L, Even, J, Bondi, A, Guo, W, Richard, S, Folliot, H, Labbe, C, Cornet, C, Dehaese, O, Le Corre, A, Durand, O, Loualiche, S

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Time-resolved pump probe of 1.55μm InAs∕InP quantum dots under high resonant excitation von Cornet, C., Labbé, C., Folliot, H., Caroff, P., Levallois, C., Dehaese, O., Even, J., Le Corre, A., Loualiche, S.

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Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates von Caroff, P., Bertru, N., Platz, C., Dehaese, O., Le Corre, A., Loualiche, S.

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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser von Paranthoen, C., Platz, C., Moreau, G., Bertru, N., Dehaese, O., Le Corre, A., Miska, P., Even, J., Folliot, H., Labbé, C., Patriarche, G., Simon, J.C., Loualiche, S.

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Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy von ZHOU, D, PIRON, R, DONTABACTOUNY, M, DEHAESE, O, GRILLOT, F, BATTE, T, TAVERNIER, K, EVEN, J, LOUALICHE, S

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290 fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55μm range von Gicquel-Guézo, M., Loualiche, S., Even, J., Labbé, C., Dehaese, O., Le Corre, A., Folliot, H., Pellan, Y.

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Critical thickness for InAs quantum dot formation on (311)B InP substrates von Caroff, P., Bertru, N., Lu, W., Elias, G., Dehaese, O., Létoublon, A., Le Corre, A.

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Quantitative investigations of optical absorption in InAs∕InP(311)B quantum dots emitting at 1.55μm wavelength von Cornet, C., Labbé, C., Folliot, H., Bertru, N., Dehaese, O., Even, J., Le Corre, A., Paranthoen, C., Platz, C., Loualiche, S.

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Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection von PLATZ, C, PARANTHOËN, C, MOREAU, G, SIMON, J. C, RAMDANE, A, CAROFF, P, BERTRU, N, LABBE, C, EVEN, J, DEHAESE, O, FOLLIOT, H, LE CORRE, A, LOUALICHE, S

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Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells von Guézo, M., Loualiche, S., Even, J., Le Corre, A., Dehaese, O., Pellan, Y., Marceaux, A.

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Si wafer bonded of a-Si∕a-SiNx distributed Bragg reflectors for 1.55-μm-wavelength vertical cavity surface emitting lasers von Levallois, C., Le Corre, A., Loualiche, S., Dehaese, O., Folliot, H., Paranthoen, C., Thoumyre, F., Labbé, C.

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