Effect of acid diffusion on resolution of a chemically amplified resist in X-ray lithography von NAKAMURA, J, BAN, H, DEGUCHI, K, TANAKA, A

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Evaluation of Pressure Uniformity Using a Pressure-Sensitive Film and Calculation of Wafer Distortions Caused by Mold Press in Imprint Lithography von Deguchi, Kimiyoshi, Takeuchi, Nobuyuki, Shimizu, Akira

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Resist Surface Roughness Calculated using Theoretical Percolation Model von Nakamura, Jiro, Deguchi, Kimiyoshi, Ban, Hiroshi

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Effects of Fresnel diffraction on resolution and linewidth control in synchrotron radiation lithography von SOMEMURA, Y, DEGUCHI, K

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Phantom Exposure of Chemically Amplified Resist in KrF Excimer Laser Lithography von Kawai, Yoshio, Deguchi, Kimiyoshi, Nakamura, Jiro

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Influence of pattern displacement error caused by film deposition on overlay accuracy in LSI fabrication von HORIUCHI, T, DEGUCHI, K

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Patterning characteristics of a chemically-amplified negative resist in synchrotron radiation lithography von DEGUCHI, K, MIYOSHI, K, ISHII, T, MATSUDA, T

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SYNCHROTRON RADIATION X-RAY LITHOGRAPHY FOR THE FABRICATION OF SUB-QUARTERMICRON LARGE-SCALE-INTEGRATED CIRCUITS von DEGUCHI, KIMIYOSHI

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Patterning Yield of Sub-100-nm Holes Limited by Fluctuation of Exposure and Development Reactions in Synchrotron Radiation Lithography Using Biased Mask Patterns von Deguchi, Kimiyoshi, Kawai, Yoshio, Kochiya, Hiroyuki, Ushiyama, Yukihiko, Oda, Masatoshi

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Effect of mechanical vibration on patterning characteristics in synchrotron radiation lithography von FUKUDA, M, ENDO, N, TSUYUZAKI, H, SUZUKI, M, DEGUCHI, K

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Ultra-Fine Pattern Fabrication by Synchrotron Radiation X-Ray Lithography Using a Shifter-Edge Type Phase-Shifting Mask von Toshiyuki Horiuchi, Toshiyuki Horiuchi, Kimiyoshi Deguchi, Kimiyoshi Deguchi

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Proximity Effect on Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography von Somemura, Yoh, Kimiyoshi Deguchi, Kimiyoshi Deguchi, Kazunori Miyoshi, Kazunori Miyoshi

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Patterning Characteristics of 0.1-µm Line-and-Space Pattern in Synchrotron Radiation Lithography von Somemura, Yoh, Kimiyoshi Deguchi, Kimiyoshi Deguchi, Kazunori Miyoshi, Kazunori Miyoshi

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Patterning Characteristics of Hole Patterns in Synchrotron Radiation Lithography von Nakanishi, Kazuya, Deguchi, Kimiyoshi, Matsuda, Tadahito

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Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region von Deguchi, Kimiyoshi, Nakamura, Jiro, Kawai, Yoshio, Ohno, Terukazu, Fukuda, Makoto, Oda, Masatoshi, Kochiya, Hiroyuki, Ushiyama, Yukihiko, Hamada, Hiroshi, Shimizu, Takashi

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Performance of X-Ray Stepper for Next-Generation Lithography von Fukuda, Makoto, Suzuki, Masanori, Haga, Tsuneyuki, Takeuchi, Nobuyuki, Morita, Hirofumi, Deguchi, Kimiyoshi, Taguchi, Takao, Aoyama, Hajime, Mitsui, Souichiro, Matsui, Yasuji

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Dissolution Characteristics and Surface Morphology of Chemically Amplified Resists in X-Ray Lithography von Nakamura, Jiro, Kawai, Yoshio, Deguchi, Kimiyoshi, Matsuda, Tadahito, Oda, Masatoshi

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Reduction of Image Shortening in Two-Dimensional Pattern Replication Using X-Ray Lithography von Nakanishi, Kazuya, Deguchi, Kimiyoshi, Matsuda, Tadahito, Oda, Masatoshi

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Mask Contamination Induced by X-Ray Exposure von Okada, Ikuo, Saitoh, Yasunao, Deguchi, Kimiyoshi, Fukuda, Makoto, Ban, Hiroshi, Matsuda, Tadahito

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Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels von Iba, Yoshihisa, Taguchi, Takao, Kumasaka, Fumiaki, Iizuka, Takashi, Sambonsugi, Yasuhiro, Aoyama, Hajime, Deguchi, Kimiyoshi, Fukuda, Makoto, Oda, Masatoshi, Morita, Hirofumi, Matsuda, Tadahito, Horiuchi, Kei, Matsui, Yasuji

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