X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface von VITCHEV, R. G, PIREAUX, J. J, CONARD, T, BENDER, H, WOLSTENHOLME, J, DEFRANOUX, Chr

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X-ray photoelectron spectroscopy characterisation of high-k dielectric Al 2O 3 and HfO 2 layers deposited on SiO 2/Si surface von Vitchev, R.G., Pireaux, J.J., Conard, T., Bender, H., Wolstenholme, J., Defranoux, Chr

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Effective attenuation length of Al Kα-excited Si2p photoelectrons in SiO 2, Al 2O 3 and HfO 2 thin films von Vitchev, R.G., Defranoux, Chr, Wolstenholme, J., Conard, T., Bender, H., Pireaux, J.J.

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Effective attenuation length of Al Kα-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films von Vitchev, R G, Defranoux, Chr, Wolstenholme, J, Conard, T, Bender, H, Pireaux, J J

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