Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates von Deen, David A., Storm, David F., Meyer, David J., Bass, Robert, Binari, Steven C., Gougousi, Theodosia, Evans, Keith R.

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Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture von Deen, David A., Storm, David F., Scott Katzer, D., Bass, R., Meyer, David J.

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AC Small-Signal Model for Magnetoresistive Lateral Spin Valves von Hu, Jiaxi, Deen, David A., Koester, Steven J.

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Scaling of the Nonlocal Spin and Baseline Resistances in Graphene Lateral Spin Valves von Hu, Jiaxi, Stecklein, Gordon, Deen, David A., Su, Qun, Crowell, Paul A., Koester, Steven J.

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Graphene-Based Quantum Capacitance Wireless Vapor Sensors von Deen, David A., Olson, Eric J., Ebrish, Mona A., Koester, Steven J.

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High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates von Meyer, D. J., Deen, D. A., Storm, D. F., Ancona, M. G., Katzer, D. S., Bass, R., Roussos, J. A., Downey, B. P., Binari, S. C., Gougousi, T., Paskova, T., Preble, E. A., Evans, K. R.

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Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors von Deen, David A., Osinsky, Andrei, Miller, Ross

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Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors von Deen, David A., Miller, Ross A., Osinsky, Andrei V., Downey, Brian P., Storm, David F., Meyer, David J., Scott Katzer, D., Nepal, Neeraj

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High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman's method revised von Deen, David A., Champlain, James G.

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Multilayer HfO2/TiO2 gate dielectric engineering of graphene field effect transistors von Deen, David A., Champlain, James G., Koester, Steven J.

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Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs von Meyer, David J., Bass, Robert, Katzer, D. Scott, Deen, David A., Binari, Steven C., Daniels, Kevin M., Eddy, Charles R.

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Border trap characterization in metal-oxide-graphene capacitors with HfO2 dielectrics von Ebrish, Mona A., Deen, David A., Koester, Steven J.

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High Electron Velocity Submicrometer AIN/GaN MOS-HEMTs on Freestanding GaN Substrates von MEYER, David J, DEEN, David A, PASKOVA, Tanya, PREBLE, Edward A, EVANS, Keith R, STORM, David F, ANCONA, Mario G, KATZER, D. Scott, BASS, Robert, ROUSSOS, Jason A, DOWNEY, Brian P, BINARI, Steven C, GOUGOUSI, Theodosia

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Self-aligned ALD AlO sub(x) T-gate insulator for gate leakage current suppression in SiN sub(x)-passivated AlGaN/GaN HEMTs von Meyer, David J, Bass, Robert, Katzer, DScott, Deen, David A, Binari, Steven C, Daniels, Kevin M, Eddy, Charles R

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Self-aligned ALD AlO x T-gate insulator for gate leakage current suppression in SiN x -passivated AlGaN/GaN HEMTs von Meyer, David J., Bass, Robert, Katzer, D. Scott, Deen, David A., Binari, Steven C., Daniels, Kevin M., Eddy, Charles R.

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Pinning-induced pn junction formation in low-bandgap two-dimensional semiconducting systems von Deen, David A

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High-voltage semiconductor switch von Langer, Christopher, Werking, Paul M, Deen, David A

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HIGH-VOLTAGE SEMICONDUCTOR SWITCH von DEEN, David A, LANGER, Christopher, WERKING, Paul M

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HIGH-VOLTAGE SEMICONDUCTOR SWITCH von DEEN, David A, LANGER, Christopher, WERKING, Paul M

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Lateral spin valve reader with vertically-integrated two-dimensional semiconducting channel von Deen, David A, Boonstra, Thomas Roy

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