Reliability and parasitic issues in GaN-based power HEMTs: a review von Meneghesso, G, Meneghini, M, Rossetto, I, Bisi, D, Stoffels, S, Van Hove, M, Decoutere, S, Zanoni, E

Volltext

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon von Van Hove, M., Boulay, S., Bahl, S. R., Stoffels, S., Xuanwu Kang, Wellekens, D., Geens, K., Delabie, A., Decoutere, S.

Volltext

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs von Tallarico, Andrea Natale, Stoffels, Steve, Magnone, Paolo, Posthuma, Niels, Sangiorgi, Enrico, Decoutere, Stefaan, Fiegna, Claudio

Volltext

Gate Reliability of p-GaN HEMT With Gate Metal Retraction von Tallarico, A. N., Stoffels, S., Posthuma, N., Bakeroot, B., Decoutere, S., Sangiorgi, E., Fiegna, C.

Volltext

Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures von Tian-Li Wu, Bakeroot, Benoit, Hu Liang, Posthuma, Niels, Shuzhen You, Ronchi, Nicolo, Stoffels, Steve, Marcon, Denis, Decoutere, Stefaan

Volltext

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors von Bakeroot, B., You, S., Wu, T.-L., Hu, J., Van Hove, M., De Jaeger, B., Geens, K., Stoffels, S., Decoutere, S.

Volltext

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors von Wu, Tian-Li, Marcon, Denis, Bakeroot, Benoit, De Jaeger, Brice, Lin, H. C., Franco, Jacopo, Stoffels, Steve, Van Hove, Marleen, Roelofs, Robin, Groeseneken, Guido, Decoutere, Stefaan

Volltext

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates von Chen, Zequan, Uren, Michael J., Huang, Peng, Sanyal, Indraneel, Smith, Matthew D., Vohra, Anurag, Kumar, Sujit, Decoutere, Stefaan, Bakeroot, Benoit, Kuball, Martin

Volltext

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs von Millesimo, M., Fiegna, C., Posthuma, N., Borga, M., Bakeroot, B., Decoutere, S., Tallarico, A. N.

Volltext

Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering von Borga, Matteo, Posthuma, Niels, Vohra, Anurag, Bakeroot, Benoit, Decoutere, Stefaan

Volltext

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons von Meneghini, M., Bisi, D., Marcon, D., Stoffels, S., Van Hove, M., Wu, T.-L., Decoutere, S., Meneghesso, G., Zanoni, E.

Volltext

Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability von Filho, Walter Gonçalez, Borga, Matteo, Geens, Karen, Khan, Md Arif, Cingu, Deepthi, Chatterjee, Urmimala, Vohra, Anurag, Decoutere, Stefaan, Bakeroot, Benoit

Volltext

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs von Rackauskas, Ben, Uren, Michael J., Stoffels, Steve, Ming Zhao, Decoutere, Stefaan, Kuball, Martin

Volltext

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application von Vohra, Anurag, Geens, Karen, Zhao, Ming, Syshchyk, Olga, Hahn, Herwig, Fahle, Dirk, Bakeroot, Benoit, Wellekens, Dirk, Vanhove, Benjamin, Langer, Robert, Decoutere, Stefaan

Volltext

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs von Millesimo, M., Borga, M., Bakeroot, B., Posthuma, N., Decoutere, S., Sangiorgi, E., Fiegna, C., Tallarico, A. N.

Volltext

Role of the GaN-on-Si Epi-Stack on Δ R ON Caused by Back-Gating Stress von Millesimo, M., Borga, M., Valentini, L., Bakeroot, B., Posthuma, N., Vohra, A., Decoutere, S., Fiegna, C., Tallarico, A. N.

Volltext

Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation von Tallarico, Andrea Natale, Stoffels, Steve, Posthuma, Niels, Decoutere, Stefaan, Sangiorgi, Enrico, Fiegna, Claudio

Volltext

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs von Bisi, Davide, Meneghini, Matteo, Marino, Fabio Alessio, Marcon, Denis, Stoffels, Steve, Van Hove, Marleen, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

Volltext

Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates von Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Bakeroot, Benoit, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan

Volltext

Monolithic 650-V Dual-Gate p-GaN Bidirectional Switch von Baratella, G., Chatterjee, U., Syshchyk, O., Borga, M., Fabris, E., Cosnier, T., Bakeroot, B., Decoutere, S.

Volltext