Plasma processing of low-k dielectrics von Baklanov, Mikhail R., de Marneffe, Jean-Francois, Shamiryan, Denis, Urbanowicz, Adam M., Shi, Hualiang, Rakhimova, Tatyana V., Huang, Huai, Ho, Paul S.

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Mechanisms for plasma cryogenic etching of porous materials von Zhang, Quan-Zhi, Tinck, Stefan, de Marneffe, Jean-François, Zhang, Liping, Bogaerts, Annemie

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Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective von Thakare, Devesh, de Marneffe, Jean-François, Delabie, Annelies, Philipsen, Vicky

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Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers von Marinov, Daniil, de Marneffe, Jean-François, Smets, Quentin, Arutchelvan, Goutham, Bal, Kristof M., Voronina, Ekaterina, Rakhimova, Tatyana, Mankelevich, Yuri, El Kazzi, Salim, Nalin Mehta, Ankit, Wyndaele, Pieter-Jan, Heyne, Markus Hartmut, Zhang, Jianran, With, Patrick C., Banerjee, Sreetama, Neyts, Erik C., Asselberghs, Inge, Lin, Dennis, De Gendt, Stefan

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Plasma nitridation for atomic layer etching of Ni von Smith, Taylor G., Ali, Ali M., de Marneffe, Jean-François, Chang, Jane P.

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Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask von Wu, Meiyi, de Marneffe, Jean-François, Opsomer, Karl, Detavernier, Christophe, Delabie, Annelies, Naujok, Philipp, Caner, Özge, Goodyear, Andy, Cooke, Mike, Saadeh, Qais, Soltwisch, Victor, Scholze, Frank, Philipsen, Vicky

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The conversion mechanism of amorphous silicon to stoichiometric WS2 von Heyne, Markus H, de Marneffe, Jean-François, Nuytten, Thomas, Meersschaut, Johan, Conard, Thierry, Caymax, Matty, Radu, Iuliana, Delabie, Annelies, Neyts, Erik C, De Gendt, Stefan

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Pore surface grafting of porous low-k dielectrics by selective polymers von Rezvanov, Askar, Zhang, Liping, Watanabe, Mitsuhiro, Krishtab, Mikhail B., Zhang, Lin, Hacker, Nigel, Verdonck, Patrick, Armini, Silvia, de Marneffe, Jean-François G. N. G.

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Use of a Thermally Degradable Chemical Vapor Deposited Polymer Film for Low Damage Plasma Processing of Highly Porous Dielectrics von Marneffe, Jean-François de, Yamaguchi, Tatsuya, Fujikawa, Makoto, Rezvanov, Askar, Chanson, Romain, Zhang, Jianran, Otell, Ziad el, Babaei-Gavan, Khashayar, Nozawa, Syuji, Kikuchi, Yuki, Maekawa, Kaoru

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Thermal recrystallization of short-range ordered WS2 films von Heyne, Markus H., de Marneffe, Jean-François, Radu, Iuliana, Neyts, Erik C., De Gendt, Stefan

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Integration of porous low-k dielectrics using post porosity pore protection von Zhang, Liping, de Marneffe, Jean-François, Verdonck, Patrick, Heylen, Nancy, Wen, Liang Gong, Wilson, Chris, Tokei, Zsolt, Boemmels, Juergen, De Gendt, Stefan, Baklanov, Mikhail R

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High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint lithography technology von Lenk, Claudia, Krivoshapkina, Yana, Hofmann, Martin, Lenk, Steve, Ivanov, Tzvetan, Rangelow, Ivo W., Ahmad, Ahmad, Reum, Alexander, Holz, Mathias, Glinsner, Thomas, Eibelhuber, Martin, Treiblmayr, Dominik, Schamberger, Barbara, Chouiki, Mustapha, Chan, Boon Teik, el Otell, Ziad, de Marneffe, Jean-François

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Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation von Zhang, Liping, de Marneffe, Jean-François, Leroy, Floriane, Lefaucheux, Philippe, Tillocher, Thomas, Dussart, Remi, Maekawa, Kaoru, Yatsuda, Koichi, Dussarrat, Christian, Goodyear, Andy, Cooke, Mike, De Gendt, Stefan, Baklanov, Mikhail R

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Conversion of a Patterned Organic Resist into a High Performance Inorganic Hard Mask for High Resolution Pattern Transfer von Marneffe, Jean-François de, Chan, Boon Teik, Spieser, Martin, Vereecke, Guy, Naumov, Sergej, Vanhaeren, Danielle, Wolf, Heiko, Knoll, Armin W.

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Quantitative characterization of pore stuffing and unstuffing for postporosity plasma protection of low-k materials von Heyne, Markus H., Zhang, Liping, Liu, Junjun, Ahmad, Iftikar, Toma, Dorel, de Marneffe, Jean-François, De Gendt, Stefan, Baklanov, Mikhail R.

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Cu passivation for integration of gap-filling ultralow-k dielectrics von Zhang, Liping, de Marneffe, Jean-Francois, Lesniewska, Alicja, Verdonck, Patrick, Heylen, Nancy, Murdoch, Gayle, Croes, Kristof, Boemmels, Juergen, Tokei, Zsolt, De Gendt, Stefan, Baklanov, Mikhail R.

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A route towards the fabrication of 2D heterostructures using atomic layer etching combined with selective conversion von Heyne, Markus H, Marinov, Daniil, Braithwaite, Nicholas, Goodyear, Andy, de Marneffe, Jean-François, Cooke, Mike, Radu, Iuliana, Neyts, Erik C, De Gendt, Stefan

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Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology von Marneffe, Jean-Fran\{c}ois de, Lazzarino, Frédéric, Goossens, Danny, Vandervorst, Alain, Richard, Olivier, Shamiryan, Denis, Xu, Kaidong, Truffert, Vincent, Boullart, Werner

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Improved Plasma Resistance for Porous Low-k Dielectrics by Pore Stuffing Approach von Zhang, Liping, de Marneffe, Jean-Francois, Heyne, Markus H., Naumov, Sergej, Sun, Yiting, Zotovich, Alexey, el Otell, Ziad, Vajda, Felim, De Gendt, Stefan, Baklanov, Mikhail R.

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Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films von Sun, Yiting, Levrau, Elisabeth, Zhang, Liping, Geypen, Jef, Meersschaut, Johan, Franquet, Alexis, Le, Quoc Toan, de Marneffe, Jean-François, Bender, Hugo, Struyf, Herbert, Detavernier, Christophe, Baklanov, Mikhail, De Feyter, Steven, Armini, Silvia

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