Reactive ion etching of SiGe alloys using HBr von BESTWICK, T. D, OEHRLEIN, G. S, YING ZHANG, KROESEN, G. M. W, DE FRESART, E

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75-GHz fT SiGe-base heterojunction bipolar transistors von PATTON, G. L, COMFORT, J. H, MEYERSON, B. S, CRABBE, E. F, SCILLA, G. J, DE FRESART, E, STORK, J. M. C, SUN, J. Y.-C, HARAME, D. L, BURGHARTZ, J. N

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Methods of manufacturing trench semiconductor devices with edge termination structures von Wang Peilin, Chen Jingjing, de Frésart Edouard

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Edge termination for trench gate FET von Qin Ganming, de Frésart Edouard, Ku Pon Sung, Zitouni Moaniss

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Semiconductor superjunction structure von de Frésart, Edouard D

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Semiconductor devices with low resistance back-side coupling von de Frésart, Edouard, Baird, Robert W

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Methods for forming semiconductor devices with low resistance back-side coupling von de Frésart, Edouard, Baird, Robert W

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Methods for fabricating semiconductor devices having reduced gate-drain capacitance von Radic, Ljubo, de Frésart, Edouard D

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Bidirectional trench FET with gate-based resurf von de Frésart Edouard D, Stefanov Evgueniy N, Qin Ganming, Zupac Dragan, Ku Pon Sung, Zitouni Moaniss, Petras Michael F

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Strained semiconductor power device and method von de Frésart, Edouard D, Baird, Robert W

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Superjunction trench device and method von de Frésart, Edouard D, Baird, Robert W

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Trench power device and method von de Frésart, Edouard D, Baird, Robert W

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High voltage TMOS semiconductor device with low gate charge structure and method of making von Wang, Peilin, de Frésart, Edouard D, Qin, Ganming, Zhou, Hongwei

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Reactive ion etching of SiGe alloys using CF2Cl2 von YING ZHANG, OEHRLEIN, G. S, DE FRESART, E

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Superjunction power MOSFET von de Frésart, Edouard D, Baird, Robert W, Qin, Ganming

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Semiconductor component having high voltage MOSFET and method of manufacture von de Frésart, Edouard, Parris, Patrice, Tam, Pak

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Semiconductor device and method of manufacture therefor von Stefanov Evgueniy, Dupuy Philippe, de Fresart Edouard

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Method of manufacturing a semiconductor component and semiconductor component thereof von de Frésart, Edouard, Steele, John W, Theodore, David

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Semiconductor devices having reduced gate-drain capacitance von RADIC LJUBO, DE FRÉSART EDOUARD D

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Power device termination structures and methods von QIN GANMING, ZITOUNI MOANISS, DE FRÉSART EDOUARD D, KU PON SUNG

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