Strong coupling of emitters to single plasmonic nanoparticles: exciton-induced transparency and Rabi splitting von Pelton, Matthew, Storm, S. David, Leng, Haixu

Volltext

Strong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures von Passler, Nikolai Christian, Gubbin, Christopher R, Folland, Thomas Graeme, Razdolski, Ilya, Katzer, D. Scott, Storm, David F, Wolf, Martin, De Liberato, Simone, Caldwell, Joshua D, Paarmann, Alexander

Volltext

Angle-independent plasmonic substrates for multi-mode vibrational strong coupling with molecular thin films von Brawley, Zachary T., Storm, S. David, Contreras Mora, Diego A., Pelton, Matthew, Sheldon, Matthew

Volltext

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy von Growden, Tyler A., Storm, David F., Zhang, Weidong, Brown, Elliott R., Meyer, David J., Fakhimi, Parastou, Berger, Paul R.

Volltext

Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes von Growden, Tyler A., Storm, David F., Cornuelle, Evan M., Brown, Elliott R., Zhang, Weidong, Downey, Brian P., Roussos, Jason A, Cronk, Nicholas, Ruppalt, Laura B., Champlain, James G., Berger, Paul R., Meyer, David J.

Volltext

Structural and optical properties of cubic GaN films on high-thermal conductivity substrates von Freitas, Jaime A., Culbertson, James C., Storm, David F., Mahadik, Nadeemullah A., Nepal, Neeraj, Anderson, Travis J.

Volltext

Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates von Hardy, Matthew T., Downey, Brian P., Nepal, Neeraj, Storm, David F., Katzer, D. Scott, Meyer, David J.

Volltext

Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures von Growden, Tyler A, Zhang, Weidong, Brown, Elliott R, Storm, David F, Meyer, David J, Berger, Paul R

Volltext

Observational constraints on inflection point quintessence with a cubic potential von Storm, S. David, Scherrer, Robert J.

Volltext

Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications von Katzer, D. Scott, Nepal, Neeraj, Hardy, Matthew T., Downey, Brian P., Storm, David F., Jin, Eric N., Yan, Rusen, Khalsa, Guru, Wright, John, Lang, Andrew C., Growden, Tyler A., Gokhale, Vikrant, Wheeler, Virginia D., Kramer, Alan R., Yater, Joan E., Xing, Huili Grace, Jena, Debdeep, Meyer, David J.

Volltext

Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN von Hardy, Matthew T., Downey, Brian P., Meyer, David J., Nepal, Neeraj, Storm, David F., Katzer, D. Scott

Volltext

Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates von Deen, David A., Storm, David F., Meyer, David J., Bass, Robert, Binari, Steven C., Gougousi, Theodosia, Evans, Keith R.

Volltext

Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates von Meyer, David J., Downey, Brian P., Katzer, D. Scott, Nepal, Neeraj, Wheeler, Virginia D., Hardy, Matthew T., Anderson, Travis J., Storm, David F.

Volltext

930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template von Growden, Tyler A., Cornuelle, Evan M., Storm, David F., Zhang, Weidong, Brown, Elliott R., Whitaker, Logan M., Daulton, Jeffrey W., Molnar, Richard, Meyer, David J., Berger, Paul R.

Volltext

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture von Deen, David A., Storm, David F., Scott Katzer, D., Bass, R., Meyer, David J.

Volltext

Probing Defects in Epitaxially Grown Cubic Boron Nitride on Diamond von Lang, Andrew C., Storm, David F., Maximenko, Sergey I, Nepal, Neeraj, Meyer, David J, Stroud, Rhonda M

Volltext

Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures von Zhang, Weidong, Growden, Tyler A., Berger, Paul R., Storm, David F., Meyer, David J., Brown, Elliott R.

Volltext

Mg‐Facilitated Growth of Cubic Boron Nitride by Ion Beam‐Assisted Molecular Beam Epitaxy von Storm, David F., Maximenko, Sergey I., Lang, Andrew C., Nepal, Neeraj, Feygelson, Tatyana I., Pate, Bradford B., Affouda, Chaffra A., Meyer, David J.

Volltext

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes von Growden, Tyler A., Zhang, Weidong, Brown, Elliott R., Storm, David F., Hansen, Katurah, Fakhimi, Parastou, Meyer, David J., Berger, Paul R.

Volltext

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 von Cornuelle, Evan M., Growden, Tyler A., Storm, David F., Brown, Elliott R., Zhang, Weidong, Downey, Brian P., Gokhale, Vikrant, Ruppalt, Laura B., Champlain, James G., Peri, Prudhvi, McCartney, Martha R., Smith, David J., Meyer, David J., Berger, Paul R.

Volltext