Deep level in the InAs/InAsSb superlattice revealed by forward-bias tunneling von Rhiger, David R.

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Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe von Rhiger, David R.

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Current-Voltage Analysis of Dual-Band n-p-n HgCdTe Detectors von Rhiger, David R., Bangs, James W.

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Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors von Rhiger, David R., Smith, Edward P.

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Analysis of III–V Superlattice nBn Device Characteristics von Rhiger, David R., Smith, Edward P., Kolasa, Borys P., Kim, Jin K., Klem, John F., Hawkins, Samuel D.

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Characterization of LWIR diodes on InAs/GaSb Type-II superlattice material von Rhiger, David R., Kvaas, Robert E., Harris, Sean F., Hill, Cory J.

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Use of ellipsometry to characterize the surface of HgCdTe von RHIGER, D. R

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Low-energy electron-enhanced etching of HgCdTe von JAEHWA KIM, KOGA, T. S, GILLIS, H. P, GOORSKY, Mark S, GARWOOD, Gerald A, VARESI, John B, RHIGER, David R, JOHNSON, Scott M

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Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall von Herrera, M., Chi, M., Bonds, M., Browning, N. D., Woolman, Joseph N., Kvaas, Robert E., Harris, Sean F., Rhiger, David R., Hill, Cory J.

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Extraction of mobile impurities from CdZnTe von Sen, Sanghamitra, Rhiger, David R, Curtis, Charles R, Norton, Paul R

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Strain relief in epitaxial HgCdTe by growth on a reticulated substrate von Rhiger, David R, Sen, Sanghamitra, Gordon, Eli E

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CdZnTe substrate producibility and its impact on IRFPA yield von Sen, Sanghamitra, Hettich, Herbert L., Rhiger, David R., Price, Stephen L., Currie, Malcolm C., Ginn, Robert P., McLean, Eugene O.

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Investigation of the cross-hatch pattern and localized defects in epitaxial HgCdTe von Rhiger, David R., Peterson, Jeffrey M., Emerson, Robert M., Gordon, Eli E., Sen, Sanghamitra, Chen, Yue, Dudley, Michael

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Lattice mismatch induced morphological features and strain in HgCdTe epilayers on CdZnTe substrates von Rhiger, David R., Sen, Sanghamitra, Peterson, Jeffrey M., Chung, Hua, Dudley, Michael

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Atomic scale analysis of the effect of the SiO 2 passivation treatmenton InAs/GaSb superlattice mesa sidewall von Herrera, M., Chi, M., Bonds, M., Browning, N. D., Woolman, Joseph N., Kvaas, Robert E., Harris, Sean F., Rhiger, David R., Hill, Cory J.

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Aluminum nitride passivation layer for mercury cadmium telluride in an electrical device von Grama, George, Clarke, Andrew, Farrell, Stuart B, Rhiger, David R

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Infrared detecting with multiple absorbers in a sensing element von Mustafa, Jamal I, Smith, Edward P, Rhiger, David R

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ALUMINUM NITRIDE PASSIVATION LAYER FOR MERCURY CADMIUM TELLURIDE IN AN ELECTRICAL DEVICE von Grama, George, Clarke, Andrew, Farrell, Stuart B, Rhiger, David R

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ALUMINUM NITRIDE PASSIVATION LAYER FOR MERCURY CADMIUM TELLURIDE IN AN ELECTRICAL DEVICE von FARRELL, Stuart B, CLARKE, Andrew, RHIGER, David R, GRAMA, George

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INFRARED DETECTING WITH MULTIPLE ABSORBERS IN A SENSING ELEMENT von Mustafa, Jamal I, Smith, Edward P, Rhiger, David R

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