Study of Low Voltage Prebreakdown Sites in Multicrystalline Si Based Cells by the LBIC, EL, and EDS Methods von Danilin, A. B., Magomedbekov, E. P., Yakimov, E. B., Orlov, V. I.

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Wave-ordered structures formed on SOI wafers by reactive ion beams von Smirnov, V.K., Kibalov, D.S., Krivelevich, S.A., Lepshin, P.A., Potapov, E.V., Yankov, R.A., Skorupa, W., Makarov, V.V., Danilin, A.B.

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Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile von Kögler, R., Yankov, R.A., Posselt, M., Danilin, A.B., Skorupa, W.

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Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon von Belogorokhov, A.I, Bublik, V.T, Scherbachev, K.D, Parkhomenko, Yu.N, Makarov, V.V, Danilin, A.B

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Impact of in situ photoexcitation on the defectivity of silicon layer implanted with different dose rates of nitrogen ions von DANILIN, A. B, NEMIROVSKI, A. W

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Analysis (Simulation) of Ni-63 beta-voltaic cells based on silicon solar cells von Gorbatsevich, A. A., Danilin, A. B., Korneev, V. I., Magomedbekov, E. P., Molin, A. A.

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Mechanisms of phase transitions in ion-doped silicon layers von DANILIN, A. B, MORDKOVICH, V. N

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Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses von Charni, L.A., Danilin, A.B., Drakin, K.A., Malinin, A.A., Parkhomenko, Yu.N., Petrov, A.F., Vyletalina, O.I.

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Formation of thin silicon nitride layers on Si by low energy N2+ ion bombardment von Bachurin, V.I., Churilov, A.B., Potapov, E.V., Smirnov, V.K., Makarov, V.V., Danilin, A.B.

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Proximity gettering of transition metals in separation by implanted oxygen structures von Skorupa, W., Hatzopoulos, N., Yankov, R. A., Danilin, A. B.

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Spatial distribution of defects in ion-implanted and annealed Si: The RP/2 effect von Kögler, R, Yankov, R.A, Kaschny, J.R, Posselt, M, Danilin, A.B, Skorupa, W

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The anomalous depth distribution of low dose oxygen and nitrogen ions implanted into silicon von Wong, JKY, Kilner, JA, Danilin, AB, Charniy, IV, Charniy, LA

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Distribution of gettering centres at a buried amorphous layer in silicon von Kögler, R., Eichhorn, F., Mücklich, A., Danilin, A.B., Skorupa, W.

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Silicon amorphization model in the process of ion implantation von Danilin, A. B., Mordkovich, V. N.

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Proximity gettering of copper in separation-by-implanted-oxygen structures von Yankov, R.A., Hatzopoulos, N., Skorupa, W., Danilin, A.B.

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Behavior of oxygen and nitrogen upon simultaneous substoichiometric implantation into silicon von Borun, A. F., Danilin, A. B., Mordkovich, V. N., Temper, E. M.

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Ion-beam synthesis of new phases in silicon interpreted as the decay of a supersaturated solid solution von Danilin, A.B.

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Ion-beam synthesis of new phases in silicon interpreted as the decay of a supersaturated solid solution von Danilin, A.B.

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Metal Gettering by Defective Regions in Carbon-Implanted Silicon von Skorupa, Wolfgang, Danilin, A.B., Kögler, Reinhard, Kaschny, J.R., Yankov, R.A., Werner, P.

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Photostimulated defect-impurity reactions during ion bombardment of Si von Danilin, A.B., Erokhin, Yu.N., Mordkovich, V.N.

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