Materials for spin-transfer-torque magnetoresistive random-access memory von Yuasa, Shinji, Hono, Kazuhiro, Hu, Guohan, Worledge, Daniel C.

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A new spin on magnetic memories von Kent, Andrew D., Worledge, Daniel C.

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Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications von Safranski, Christopher, Hu, Guohan, Sun, Jonathan Z., Hashemi, Pouya, Brown, Stephen L., Buzi, Luxherta, D'Emic, Christopher P., Edwards, Eric R. J., Galligan, Eileen, Gottwald, Matthias G., Gunawan, Oki, Karimeddiny, Saba, Jung, Hyunsung, Kim, Juhyun, Latzko, Ken, Trouilloud, Philip L., Worledge, Daniel C.

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Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory von Nowak, Janusz J., Robertazzi, Ray P., Sun, Jonathan Z., Hu, Guohan, Park, Jeong-Heon, Lee, JungHyuk, Annunziata, Anthony J., Lauer, Gen P., Kothandaraman, Raman, O'Sullivan, Eugene J., Trouilloud, Philip L., Kim, Younghyun, Worledge, Daniel C.

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Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory von Hu, Guohan, Nowak, Janusz J., Gottwald, Matthias G., Sun, Jonathan Z., Houssameddine, Dimitri, Bak, Junghoon, Brown, Stephen L., Hashemi, Pouya, He, Qing, Kim, Juhyun, Kothandaraman, Chandrasekharan, Lauer, Gen, Lee, Hyun Koo, Suwannasiri, Thitima, Trouilloud, Philip L., Worledge, Daniel C.

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Publisher Correction: Spin-transfer torque magnetoresistive random access memory technology status and future directions von Worledge, Daniel C., Hu, Guohan

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Theory of Spin Torque Switching Current for the Double Magnetic Tunnel Junction von Worledge, Daniel C.

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Spin-transfer torque magnetoresistive random access memory technology status and future directions von Worledge, Daniel C., Hu, Guohan

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Perpendicular Magnetic Anisotropy and Easy Cone State in Ta/Co60Fe20B20 /MgO von Shaw, Justin M., Nembach, Hans T., Weiler, Mathias, Silva, T. J., Schoen, Martin, Sun, Jonathan Z., Worledge, Daniel C.

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ChemInform Abstract: A New Spin on Magnetic Memories von Kent, Andrew D., Worledge, Daniel C.

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Double spin filter tunnel junction von Worledge, Daniel C

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Double spin filter tunnel junction von Worledge, Daniel C

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Perpendicular Magnetic Anisotropy and Easy Cone State in Ta/Co 60 Fe 20 B 20 /MgO von Shaw, Justin M., Nembach, Hans T., Weiler, Mathias, Silva, T. J., Schoen, Martin, Sun, Jonathan Z., Worledge, Daniel C.

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Double spin filter tunnel junction von Worledge, Daniel C

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Impact of External Magnetic Fields on STT-MRAM: An Application Note von Dieny, Bernard, Aggarwal, Sanjeev, Naik, Vinayak Bharat, Couet, Sebastien, Coughlin, Thomas, Fukami, Shunsuke, Garello, Kevin, Guedj, Jack, Incorvia, Jean Anne C., Lebrun, Laurent, Lee, Kyung-Jin, Leonelli, Daniele, Noh, Yonghwan, Salimy, Siamak, Soss, Steven, Thomas, Luc, Wang, Weigang, Worledge, Daniel C.

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Spin hall effect MRAM with self-reference read von Worledge, Daniel C

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THERMALLY-ASSISTED SPIN TRANSFER TORQUE MEMORY WITH IMPROVED BIT ERROR RATE PERFORMANCE von Worledge, Daniel C

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SEED LAYER AND FREE MAGNETIC LAYER FOR PERPENDICULAR ANISOTROPY IN A SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY von WORLEDGE, Daniel, C

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Thermally-assisted spin transfer torque memory with improved bit error rate performance von Worledge, Daniel C

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Thin reference layer for STT MRAM von Kim, Younghyun, Hu, Guohan, Worledge, Daniel C

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