Reverse selectivity – High silicon nitride and low silicon dioxide removal rates using ceria abrasive-based dispersions von Veera Dandu, P.R., Devarapalli, V.K., Babu, S.V.

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Role of Poly(diallyldimethylammonium chloride) in Selective Polishing of Polysilicon over Silicon Dioxide and Silicon Nitride Films von Penta, Naresh K, Dandu Veera, P. R, Babu, S. V

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Novel phosphate-functionalized silica-based dispersions for selectively polishing silicon nitride over silicon dioxide and polysilicon films von Veera Dandu, P.R., Penta, Naresh K., Peethala, B.C., Babu, S.V.

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Influence of adhesion of silica and ceria abrasive nanoparticles on Chemical–Mechanical Planarization of silica surfaces von Volkov, D.O., Dandu, P.R Veera, Goodman, H., Santora, B., Sokolov, I.

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Novel α-amine-functionalized silica-based dispersions for selectively polishing polysilicon and Si(1 0 0) over silicon dioxide, silicon nitride or copper during chemical mechanical... von Veera Dandu, P.R., Penta, Naresh K., Babu, S.V.

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Role of amines and amino acids in enhancing the removal rates of undoped and P-doped polysilicon films during chemical mechanical polishing von Veera Dandu, P.R., Peethala, B.C., Penta, Naresh K., Babu, S.V.

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Selective Chemical Mechanical Polishing of Silicon Dioxide over Silicon Nitride for Shallow Trench Isolation Using Ceria Slurries von Dandu Veera, P. R., Peddeti, Shivaji, Babu, S. V.

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Silicon Nitride Film Removal During Chemical Mechanical Polishing Using Ceria-Based Dispersions von Veera Dandu, P. R., Peethala, B. C., Amanapu, H. P., Babu, S. V.

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Role of polycation adsorption in poly-Si, SiO₂ and Si₃N₄ removal during chemical mechanical polishing: Effect of polishing pad surface chemistry von Penta, Naresh K, Matovu, John B, Veera, P.R. Dandu, Krishnan, Sitaraman, Babu, S.V

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Selective Polishing of Polysilicon during Fabrication of Microelectromechanical Systems Devices von Dandu Veera, P. R., Natarajan, A., Hegde, S., Babu, S. V.

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Charge Density and pH Effects on Polycation Adsorption on Poly-Si, SiO2, and Si3N4 Films and Impact on Removal During Chemical Mechanical Polishing von Penta, Naresh K, Veera, P. R. Dandu, Babu, S. V

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Role of Different Additives on Silicon Dioxide Film Removal Rate during Chemical Mechanical Polishing Using Ceria-Based Dispersions von Dandu, P. R. Veera, Peethala, B. C., Babu, S. V.

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Charge Density and pH Effects on Polycation Adsorption on Poly-Si, SiO 2 , and Si 3 N 4 Films and Impact on Removal During Chemical Mechanical Polishing von Penta, Naresh K., Veera, P. R. Dandu, Babu, S. V.

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Tunable Removal Rates of Silicon Dioxide, Silicon Nitride, and Polysilicon Films von Babu, S.V., Dandu P. R., Veera, Penta, Naresh

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Tunable polish rates by varying dissolved oxygen content von DANDU P. R. VEERA, LAGUDU UMA RAMES KRISHNA, PENTA NARESH K, SURYADEVARA BABU V

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