Entrained flow gasification. Part 2: Mathematical modeling of the gasifier using RANS method von Mancini, M., Alberti, M., Dammann, M., Santo, U., Eckel, G., Kolb, T., Weber, R.

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Trapping Effects at the Drain Edge in 600 V GaN-on-Si HEMTs von Wespel, M., Polyakov, V. M., Dammann, M., Reiner, R., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.

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Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies von Neininger, P., Mikulla, M., Döring, P., Dammann, M., Thome, F., Krause, S., Schwantuschke, D., Brückner, P., Friesicke, C., Quay, R.

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The threshold of toxicological concern for prenatal developmental toxicity von van Ravenzwaay, B., Dammann, M., Buesen, R., Schneider, S.

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Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors von Gütle, F, Polyakov, V M, Baeumler, M, Benkhelifa, F, Müller, S, Dammann, M, Cäsar, M, Quay, R, Mikulla, M, Wagner, J, Ambacher, O

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High-Efficiency, High-Temperature Continuous Class-E Sub-Waveform Solution AlGaN/GaN Power Amplifier von Carrubba, V., Maroldt, S., Musser, M., Ture, E., Dammann, M., van Raay, F., Quay, R., Bruckner, P., Ambacher, O.

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Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures von Waltereit, P., Bronner, W., Musser, M., Raay, F. van, Dammann, M., Cäsar, M., Müller, S., Kirste, L., Köhler, K., Quay, R., Mikulla, M., Ambacher, O.

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Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices von Wespel, M., Baeumler, M., Polyakov, V., Dammann, M., Reiner, R., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.

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GaN HEMTs and MMICs for space applications von Waltereit, P, Bronner, W, Quay, R, Dammann, M, Cäsar, M, Müller, S, Reiner, R, Brückner, P, Kiefer, R, van Raay, F, Kühn, J, Musser, M, Haupt, C, Mikulla, M, Ambacher, O

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The threshold of toxicological concern for prenatal developmental toxicity in rabbits and a comparison to TTC values in rats von van Ravenzwaay, B., Dammann, M., Buesen, R., Flick, B., Schneider, S.

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Selection for conformation and conformational homogeneity of litters in the German shepherd dog von Stock, K. F, Dammann, M, Distl, O

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Role of timbre and fundamental frequency in voice gender adaptation von Skuk, Verena G, Dammann, Lea M, Schweinberger, Stefan R

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Neurological complications after cadaveric and living donor liver transplantation von SANER, Fuat H, YANLI GU, MALAGO, Massimo, BROELSCH, Christoph E, MINOUCHEHR, Shahin, ILKER, Kavuk, FRUHAUF, Nils R, PAUL, Andreas, RADTKE, Arnold, DAMMANN, Marc, KATSARAVA, Zaza, KOEPPEN, Susanne

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Qualification of 50 V GaN on SiC technology for RF power amplifiers von Wel, P J, Roedle, T, Lambert, B, Blanck, H, Dammann, M

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Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs von Cäsar, M., Dammann, M., Polyakov, V., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.

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P09-11 Historical control data on pathology and neuropathology collected in OECD TG 443 or OECD TG 426 studies von Marxfeld, H., Melching-Kollmuss, S., Dammann, M., Stinchcombe, S., Gatto, V., Groeters, S.

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GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability von Waltereit, P., Bronner, W., Quay, R., Dammann, M., Kiefer, R., Müller, S., Musser, M., Kühn, J., Raay, F. van, Seelmann, M., Mikulla, M., Ambacher, O., Rijs, F. van, Rödle, T., Riepe, K.

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ECOSAR model performance with a large test set of industrial chemicals von Reuschenbach, Peter, Silvani, Maurizio, Dammann, Martina, Warnecke, Dietmar, Knacker, Thomas

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A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate von van Raay, F., Quay, R., Kiefer, R., Benkhelifa, F., Raynor, B., Pletschen, W., Kuri, M., Massler, H., Muller, S., Dammann, M., Mikulla, M., Schlechtweg, M., Weimann, G.

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Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects von Zibold, A., Dammann, M., Schmidt, R., Konstanzer, H., Kunzer, M.

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