80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes von Nougaret, L., Happy, H., Dambrine, G., Derycke, V., Bourgoin, J. -P., Green, A. A., Hersam, M. C.

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On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors von Daffe, K., Dambrine, G., Durand, C., Gaquiere, C., Haddadi, K.

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Kinetic expression analysis of the cluster mdv1-mir-M9―M4, genes meq and vIL-8 differs between the lytic and latent phases of Marek's disease virus infection von COUPEAU, D, DAMBRINE, G, RASSCHAERT, D

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Integrated MEMS RF Probe for SEM Station-Pad Size and Parasitic Capacitance Reduction von El Fellahi, A., Haddadi, K., Marzouk, J., Arscott, S., Boyaval, C., Lasri, T., Dambrine, G.

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Gigahertz frequency flexible carbon nanotube transistors von Chimot, N., Derycke, V., Goffman, M. F., Bourgoin, J. P., Happy, H., Dambrine, G.

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Gigahertz characterization of a single carbon nanotube von Nougaret, L., Dambrine, G., Lepilliet, S., Happy, H., Chimot, N., Derycke, V., Bourgoin, J.-P.

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Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications von Malmkvist, M., Lefebvre, E., Borg, M., Desplanque, L., Wallart, X., Dambrine, G., Bollaert, S., Grahn, J.

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ICP27 protein of Marek's disease virus interacts with SR proteins and inhibits the splicing of cellular telomerase chTERT and viral vIL8 transcripts von AMOR, S, STRASSHEIM, S, DAMBRINE, G, REMY, S, RASSCHAERT, D, LAURENT, S

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RF and broadband noise investigation in High-k/Metal Gate 28-nm CMOS bulk transistor von Danneville, F., Poulain, L., Tagro, Y., Lepilliet, S., Dormieu, B., Gloria, D., Scheer, P., Dambrine, G.

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Graphene nanotransistors for RF charge detection von Pallecchi, E, Wilmart, Q, Betz, A C, Jhang, S-H, Fève, G, Berroir, J-M, Lepillet, S, Dambrine, G, Happy, H, Plaçais, B

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Optimization of RF Performance of Metallic Source/Drain SOI MOSFETs Using Dopant Segregation at the Schottky Interface von Valentin, R., Dubois, E., Larrieu, G., Raskin, J.-P., Dambrine, G., Breil, N., Danneville, F.

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Anisotropic transport properties in InAs/AlSb heterostructures von Moschetti, G., Zhao, H., Nilsson, P.-Å., Wang, S., Kalabukhov, A., Dambrine, G., Bollaert, S., Desplanque, L., Wallart, X., Grahn, J.

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Fabrication and Characterization of an Epitaxial Graphene Nanoribbon-Based Field-Effect Transistor von Nan Meng, Fernandez, J F, Vignaud, D, Dambrine, G, Happy, H

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What are the limiting parameters of deep-submicron MOSFETs for high frequency applications? von Dambrine, G., Raynaud, C., Lederer, D., Dehan, M., Rozeaux, O., Vanmackelberg, M., Danneville, F., Lepilliet, S., Raskin, J.-P.

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High-Frequency Noise Performance of 60-nm Gate-Length FinFETs von Raskin, J.-P., Pailloncy, G., Lederer, D., Danneville, F., Dambrine, G., Decoutere, S., Mercha, A., Parvais, B.

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Analog/RF Performance of Multichannel SOI MOSFET von Tao Chuan Lim, Bernard, E., Rozeau, O., Ernst, T., Guillaumot, B., Vulliet, N., Buj-Dufournet, C., Paccaud, M., Lepilliet, S., Dambrine, G., Danneville, F.

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An 8-GHz ft carbon nanotube field-effect transistor for gigahertz range applications von BETHOUX, J.-M, HAPPY, H, DAMBRINE, G, DERYCKE, V, GOFFMAN, M, BOURGOIN, J.-P

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Improved Characterization Methology for MOSFETs up to 220 GHz von Waldhoff, N., Andrei, C., Gloria, D., Lepilliet, S., Danneville, F., Dambrine, G.

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Gate-Recess Technology for InAs/AlSb HEMTs von Lefebvre, E., Malmkvist, M., Borg, M., Desplanque, L., Wallart, X., Dambrine, G., Bollaert, S., Grahn, J.

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RF Small-Signal Analysis of Schottky-Barrier p-MOSFET von Valentin, R., Dubois, E., Raskin, J.-P., Larrieu, G., Dambrine, G., Tao Chuan Lim, Breil, N., Danneville, F.

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