Hydrolyzation oxidation of AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices von DALLESASSE, J. M, HOLONYAK, N. JR, SUGG, A. R, RICHARD, T. A, EL-ZEIN, N

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native oxide stabilization of AlAs-GaAs heterostructures von SUGG, A. R, HOLONYAK, N. JR, BAKER, J. E, KISH, F. A, DALLESASSE, J. M

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Planar native-oxide index-guided AlxGa1-xAs-GaAs quantum well heterostructure lasers von KISH, F. A, CARACCI, S. J, HOLONYAK, N. JR, DALLESASSE, J. M, HSIEH, K. C, RIES, M. J, SMITH, S. C, BURNHAM, R. D

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Dependence on doping type (p/n) of the water vapor oxidation of high-gap AlxGa1-xAs von KISH, F. A, MARANOWSKI, S. A, HÖFLER, G. E, HOLONYAK, N. JR, CARACCI, S. J, DALLESASSE, J. M, HSIEH, K. C

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Properties and use of In0.5(AlxGa1-x)0.5P and AlxGa1-xAs native oxides in heterostructure lasers von KISH, F. A, CARACCI, S. J, OSENTOWSKI, T. D, CRAFORD, M. G, HOLONYAK, N. JR, HSIEH, K. C, BAKER, J. E, MARANOWSKI, S. A, SUGG, A. R, DALLESASSE, J. M, FLETCHER, R. M, KUO, C. P

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Multiple-wavelength operation of a laser-diode array coupled to an external cavity von PAPEN, G. C, MURPHY, G. M, BRADY, D. J, HOWE, A. T, DALLESASSE, J. M, DEJULE, R. Y, HOLMGREN, D. J

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Native-oxide defined In0.5(Al x Ga1− x )0.5P quantum well heterostructure window lasers (660 nm) von Maranowski, S. A., Kish, F. A., Caracci, S. J., Holonyak, N., Dallesasse, J. M., Bour, D. P., Treat, D. W.

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Short-wavelength (≤6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers von DALLESASSE, J. M, NAM, D. W, DEPPE, D. G, HOLONYAK, N. JR, FLETCHER, R. M, KUO, C. P, OSENTOWSKI, T. D, CRAFORD, M. G

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Impurity diffusion and layer interdiffusion in AlxGa1-xAs-GaAs heterostructures von DEPPE, D. G, HOLONYAK, N. JR, PLANO, W. E, ROBBINS, V. M, DALLESASSE, J. M, HSIEH, K. C, BAKER, J. E

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Low-threshold disorder-defined native-oxide delineated buried-heterostructure AlxGa1-xAs-GaAs quantum well lasers von KISH, F. A, CARACCI, S. J, HOLONYAK, N. JR, DALLESASSE, J. M, HOFLER, G. E, BURNHAM, R. D, SMITH, S. C

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Native-oxide stripe-geometry In0.5(AlxsGa1-x)0.5P-In0.5Ga0.5P heterostructure laser diodes von KISH, F. A, CARACCI, S. J, HOLONYAK, N. JR, DALLESASSE, J. M, SUGG, A. R, FLETCHER, R. M, KUO, C. P, OSENTOWSKI, T. D, CRAFORD, M. G

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Native-oxide-defined coupled-stripe AlxGa1-xAs-GaAs quantum well heterostructure lasers von DALLESASSE, J. M, HOLONYAK, N. JR, HALL, D. C, EL-ZEIN, N, SUGG, A. R, SMITH, S. C, BURNHAM, R. D

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Native-oxide coupled cavity AlxGa1-xAs-GaAs quantum well heterostructure laser diodes von EL-ZEIN, N, KISH, F. A, HOLONYAK, N. JR, SUGG, A. R, RIES, M. J, SMITH, S. C, DALLESASSE, J. M, BURHAM, R. D

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Native-oxide masked impurity-induced layer disordering of AlxGa1-xAs quantum well heterostructures von DALLESASSE, J. M, HOLONYAK, N. JR, EL-ZEIN, N, RICHARD, T. A, KISH, F. A, SUGG, A. R, BURNHAM, R. D, SMITH, S. C

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Visible spectrum native-oxide coupled-stripe In0.5(AlxGa1-x)0.5P-In0.5Ga0.5P quantum well heterostructure laser arrays von KISH, F. A, CARACCI, S. J, HOLONAYK, N. JR, MARANOWSKI, S. A, DALLESASSE, J. M, BURNHAM, R. D, SMITH, S. C

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Impurity-induced layer disordering in In0.5(AlxGa1-x)0.5P-InGaP quantum-well heterostructures: visible-spectrum-buried heterostructure lasers von DALLESASSE, J. M, PLANO, W. E, NAM, D. W, HSIEH, K. C, BAKER, J. E, HOLONYAK, N. JR, KUO, C. P, FLETCHER, R. M, OSENTOWSKI, T. D, CRAFORD, M. G

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Hydrogenation-defined stripe-geometry In0.5(AlxGa1-x)0.5P quantum-well lasers von DALLESASSE, J. M, EL-ZEIN, N, HOLONYAK, N. JR, FLETCHER, R. M, KUO, C. P, OSENTOWSKI, T. D, CRAFORD, M. G

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Resonance and switching in a native-oxide-defined AlxGa1-xAs-GaAs quantum-well heterostructure laser array von EL-ZEIN, N, HOLONYAK, N. JR, KISH, F. A, SMITH, S. C, DALLESASSE, J. M, BURNHAM, R. D

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Buried heterostructure AlxGa1-xAs-GaAs quantum well lasers by Ge diffusion from the vapor von DEPPE, D. G, PLANO, W. E, DALLESASSE, J. M, HALL, D. C, GUIDO, L. J, HOLONYAK, N. JR

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