Probabilistic estimation method for frequency response function level of noise and vibration on operational transfer path analysis using Markov Chain Monte Carlo Method von MUTO, Daisuke, SATO, Wataru, YOSHIZAWA, Takashi

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Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD von Sakuraba, Masao, Muto, Daisuke, Mori, Masaki, Sugawara, Katsutoshi, Murota, Junichi

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High-performance noise proof cover using acoustic tube von MUTO, Daisuke, TAKANO, Yasushi, KAMIDE, Eisuke

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4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate von Osawa, Yuji, Sato, Takayuki, Osawa, Hiroshi, Momose, Kenji, Kageshima, Yoshiaki, Odawara, Michiya, Norimatsu, Jun, Muto, Daisuke, Tajima, Yutaka, Miyasaka, Akira, Fukada, Keisuke, Okano, Taichi

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Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy von Yamashita, Tamotsu, Sato, Takayuki, Muto, Daisuke, Momose, Kenji, Kitabatake, Makoto, Shimodaira, Yoshiki, Yamatake, Kuniaki, Miyasaka, Yoshihiko, Matsuhata, Hirofumi

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Polarity determination of InN by wet etching von Muto, Daisuke, Araki, Tsutomu, Naoi, Hiroyuki, Matsuda, Fumie, Nanishi, Yasushi

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Source process of the 2011 off the Pacific coast of Tohoku Earthquake with the combination of teleseismic and strong motion data von Yoshida, Yasuhiro, Ueno, Hiroshi, Muto, Daisuke, Aoki, Shigeki

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Novel InN growth method under In-rich condition on GaN/Al2O3 (0001) templates von Yamaguchi, Tomohiro, Muto, Daisuke, Araki, Tsutomu, Maeda, Narihiko, Nanishi, Yasushi

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Growth of M -plane (10-10) InN on LiAlO2 (100) substrate von Takagi, Yusuke, Muto, Daisuke, Yamaguchi, Tomohiro, Araki, Tsutomu, Nanishi, Yasushi

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Active noise control for acoustic field inside the cover with aperture excited by diffuse acoustic field from the outside von MUTO, Daisuke, TAKANO, Yasushi, YAMAGUCHI, Takao

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Meissner effect of superconducting InN von Inushima, Takashi, Maude, Duncan K., Muto, Daisuke, Nanishi, Yasushi

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Ar plasma irradiation effects in atomically controlled Si epitaxial growth von Muto, Daisuke, Sakuraba, Masao, Seino, Takuya, Murota, Junichi

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Relations between long-period ground motions and subsurface structures von MUTO, Daisuke, KATSUMATA, Akio

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Growth of high-quality In-rich InGaN alloys by RF–MBE for the fabrication of InN-based quantum well structures von Naoi, Hiroyuki, Kurouchi, Masahito, Muto, Daisuke, Araki, Tsutomu, Miyajima, Takao, Nanishi, Yasushi

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TEM characterization of M -plane InN grown on (100) LiAlO2 substrate by RF-MBE von Nozawa, Hirokazu, Takagi, Yusuke, Harui, Satoshi, Muto, Daisuke, Yamaguchi, Tomohiro, Araki, Tsutomu, Nanishi, Yasushi

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Conservative treatment by angiographic artery embolization of an 11-week cervical pregnancy after a period of heavy bleeding von Suzumori, Nobuhiro, Katano, Kinue, Sato, Takeshi, Okada, Junko, Nakanishi, Tamao, Muto, Daisuke, Suzuki, Yoshikatsu, Ikuta, Katsuo, Suzumori, Kaoru

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Reduction of acoustic mode in noise-proof cover with interference wave inducing apertures von MUTO, Daisuke, NISHIOKA, Akira, TAKANO, Yasushi, YAMAGUCHI, Takao

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Dependency of open area ratio on noise reduction for cover structure with apertures (Comparison between absorber inserted double plate and single plate with absorption) von MUTO, Daisuke, YAMAUCHI, Genta, TAKANO, Yasushi, YAMAGUCHI, Takao

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Probabilistic estimation method for frequency response function level of noise and vibration on operational transfer path analysis using Markov Chain Monte Carlo Method von MUTO, Daisuke, SATO, Wataru, YOSHIZAWA, Takashi

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Si atomic layer-by-layer epitaxial growth process using alternate exposure of Si(1 0 0) to SiH4 and to Ar plasma von Sakuraba, Masao, Muto, Daisuke, Seino, Takuya, Murota, Junichi

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