HETERO INTEGRATION TYPE STRAINED SILICON N-TYPE MOSFET, P-TYPE MOSFET, AND METHOD OF MANUFACTURING THE SAME von CAI JUAN, KERN LIM, KEVIN K CHAN, MOONEY PATRICIA M, DAINE C BOYD

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HYBRID PLANER AND FinFET CMOS DEVICE von KEDZIERSKI JAKUB T, KANARSKY THOMAS S, DORIS BRUCE B, IEONG MEIKEI, YANG MIN, DAINE C BOYD

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METHOD FOR MANUFACTURING ULTRA THIN BODY FIELD EFFECT TRANSISTOR (FET) AND ULTRA-THIN BODY FET DEVICE (ULTRA-THIN BODY SUPER-STEEP RETROGRADE WELL (SSRW) FET DEVICE) MANUFACTURED B... von MO RENEE T, SHAHIDI GHAVAM G, LEONG MEIKEI, HOLT JUDSON R, DAINE C BOYD, REN ZHIBIN

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CMOS DEVICE AND METHOD OF MANUFACTURING THE SAME von MOCUTA DAN M, MOCUTA ANDA C, IEONG MEIKEI, CHEN HUAJIE, DAINE C BOYD, AMOS RICKY S

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FIELD EFFECT TRANSISTOR EQUIPPED WITH VERTICAL GATE SIDE WALL AND MANUFACTURE THEREOF von WILLE WILLIAM C, HUSSEIN I HANAPHY, BURNS STUART M, DAINE C BOYD, TAUR YUAN

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FIELD-EFFECT TRANSISTOR HAVING IMPROVED IMPLANT AND ITS MANUFACTURE von WILLE WILLIAM C, HUSSEIN I HANAPHY, BURNS STUART M, DAINE C BOYD, TAUR YUAN

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ANISOTROPIC NITRIDE ETCHING HAVING HIGH SENSITIVITY WITH RESPECT TO OXIDE AND PHOTORESIST LAYER von WILLIAM C WILEY, HUSSEIN I HANAPHY, WOLDEMAR W KOKON, BURNS STUART M, RICHARD WISE, DAINE C BOYD

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