Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates von Moon, J.S., Curtis, D., Hu, M., Wong, D., McGuire, C., Campbell, P.M., Jernigan, G., Tedesco, J.L., VanMil, B., Myers-Ward, R., Eddy, C., Gaskill, D.K.

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Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene von Nyakiti, L.O., Wheeler, V.D., Garces, N.Y., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm von Jun Hu, Xiaobin Xin, Xueqing Li, Zhao, J.H., VanMil, B.L., Kok-Keong Lew, Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8 von VANMIL, B. L, LEW, K.-K, MYERS-WARD, R. L, HOLM, R. T, GASKILL, D. K, EDDY, C. R, WANG, L, ZHAO, P

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates von Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.

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Quantum transport in functionalized epitaxial graphene without electrostatic gating von Lock, E.H., Prestigiacomo, J.C., Dev, P., Nath, A., Myers-Ward, R.L., Reinecke, T.L., Gaskill, D.K., Osofsky, M.S.

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Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm von Moon, J.S., Curtis, D., Bui, S., Hu, M., Gaskill, D.K., Tedesco, J.L., Asbeck, P., Jernigan, G.G., VanMil, B.L., Myers-Ward, R.L., Eddy, C.R., Campbell, P.M., Weng, X.

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Magnetometry Based on Silicon-Vacancy Centers in Isotopically Purified 4 H - SiC von Lekavicius, I., Carter, S.G., Pennachio, D.J., White, S., Hajzus, J.R., Purdy, A.P., Gaskill, D.K., Yeats, A.L., Myers-Ward, R.L.

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Terahertz ellipsometry and terahertz optical-Hall effect von Hofmann, T., Herzinger, C.M., Tedesco, J.L., Gaskill, D.K., Woollam, J.A., Schubert, M.

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Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC von Xu, P., Qi, D., Schoelz, J.K., Thompson, J., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K., Neek-Amal, M., Peeters, F.M.

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Orders of Magnitude Improvement in Coherence of Silicon-Vacancy Ensembles in Isotopically Purified 4H-SiC von I. Lekavicius, R.L. Myers-Ward, D.J. Pennachio, J.R. Hajzus, D.K. Gaskill, A.P. Purdy, A.L. Yeats, P.G. Brereton, E.R. Glaser, T.L. Reinecke, S.G. Carter

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Orders of Magnitude Improvement in Coherence of Silicon-Vacancy Ensembles in Isotopically Purified 4 H - SiC von Lekavicius, I., Myers-Ward, R.L., Pennachio, D.J., Hajzus, J.R., Gaskill, D.K., Purdy, A.P., Yeats, A.L., Brereton, P.G., Glaser, E.R., Reinecke, T.L., Carter, S.G.

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Plasma-based chemical modification of epitaxial graphene with oxygen functionalities von Hernández, S.C., Wheeler, V.D., Osofsky, M.S., Jernigan, G.G., Nagareddy, V.K., Nath, A., Lock, E.H., Nyakiti, L.O., Myers-Ward, R.L., Sridhara, K., Horsfall, A.B., Eddy, C.R., Gaskill, D.K., Walton, S.G.

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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface von Xu, P., Ackerman, M.L., Barber, S.D., Schoelz, J.K., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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(Invited) Recent Advances in Graphene RF Electronics: Opportunities von Moon, Jeong-sun, Gaskill, D.K., Asbeck, Peter

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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H 2 and C 3H 8 von VanMil, B.L., Lew, K.-K., Myers-Ward, R.L., Holm, R.T., Gaskill, D.K., Eddy, C.R., Wang, L., Zhao, P.

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Qualification of OMVPE AlGaAs/GaAs HBT structures using nondestructive photoreflectance spectroscopy von Bottka, N., Gaskill, D.K., Wright, P.D., Kaliski, R.W., Williams, D.A.

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Photoreflectance characterization of OMVPE GaAs on Si von Bottka, N., Gaskill, D.K., Griffiths, R.J.M., Bradley, R.R., Joyce, T.B., Ito, C., McIntyre, D.

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Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC von VanMil, B.L., Lew, K.K., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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Growth of superconducting thin films of bismuth-strontium-calcium-copper oxide by organometallic chemical vapor deposition von Berry, A.D., Holm, R.T., Cukauskas, E.J., Fatemi, M., Gaskill, D.K., Kaplan, R., Fox, W.B.

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