A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation von Yau, J.-B., Cai, J., Hashemi, P., Balakrishnan, K., D'Emic, C., Ning, T. H.

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Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate von Huiling Shang, Kam-Leung Lee, Kozlowski, P., D'Emic, C., Babich, I., Sikorski, E., Meikei Ieong, Wong, H.-S.P., Guarini, K., Haensch, W.

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Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources von Zhen Zhang, Pagette, F, D'Emic, C, Yang, B, Lavoie, C, Zhu, Y, Hopstaken, M, Maurer, S, Murray, C, Guillorn, M, Klaus, D, Bucchignano, J, Bruley, J, Ott, J, Pyzyna, A, Newbury, J, Song, W, Chhabra, V, Zuo, G, Lee, K.-L, Ozcan, A, Silverman, J, Ouyang, Q, Park, D.-G, Haensch, W, Solomon, P M

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Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications von Gusev, E.P., Cabral, C., Copel, M., D’Emic, C., Gribelyuk, M.

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SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors von Huang, L. J., Chu, J. O., Canaperi, D. F., D’Emic, C. P., Anderson, R. M., Koester, S. J., Wong, H.-S. Philip

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Electron and hole mobility enhancement in strained SOI by wafer bonding von Lijuan Huang, Chu, J.O., Goma, S.A., D'Emic, C.P., Koester, S.J., Canaperi, D.F., Mooney, P.M., Cordes, S.A., Speidell, J.L., Anderson, R.M., Wong, H.-S.P.

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Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues von Gusev, E.P, Cartier, E, Buchanan, D.A, Gribelyuk, M, Copel, M, Okorn-Schmidt, H, D’Emic, C

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Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100) von Gusev, E. P., Shang, H., Copel, M., Gribelyuk, M., D’Emic, C., Kozlowski, P., Zabel, T.

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Charge trapping and detrapping in HfO2 high-κ gate stacks von Gusev, E.P, D'Emic, C, Zafar, S, Kumar, A

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Bias-temperature instabilities and radiation effects in MOS devices von Zhou, X.J., Fleetwood, D.M., Felix, J.A., Gusev, E.P., D'Emic, C.

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Charge detrapping in HfO2 high-κ gate dielectric stacks von Gusev, E. P., D’Emic, C. P.

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Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al2O3/SiOxNy/Si(100) gate stacks von Xiong, H. D., Fleetwood, D. M., Felix, J. A., Gusev, E. P., D’Emic, C.

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Universal tunneling behavior in technologically relevant P/N junction diodes von Solomon, Paul M., Jopling, Jason, Frank, David J., D’Emic, Chris, Dokumaci, O., Ronsheim, P., Haensch, W. E.

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Optimization of pH sensing using silicon nanowire field effect transistors with HfO sub(2) as the sensing surface von Zafar, S, D'Emic, C, Afzali, A, Fletcher, B, Zhu, Y, Ning, T

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Ultrathin high-K gate stacks for advanced CMOS devices von Gusev, E.P., Buchanan, D.A., Cartier, E., Kumar, A., DiMaria, D., Guha, S., Callegari, A., Zafar, S., Jamison, P.C., Neumayer, D.A., Copel, M., Gribelyuk, M.A., Okorn-Schmidt, H., D'Emic, C., Kozlowski, P., Chan, K., Bojarczuk, N., Ragnarsson, L.-A., Ronsheim, P., Rim, K., Fleming, R.J., Mocuta, A., Ajmera, A.

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Nitrogen interface engineering in Al2O3 capacitors for improved thermal stability von Kirsch, P. D., Park, D.-G., Chan, K. K., D’Emic, C., Bruley, J., Jammy, R.

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Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics von Min Yang, Gusev, E.P., Meikei Ieong, Gluschenkov, O., Boyd, D.C., Chan, K.K., Kozlowski, P.M., D'Emic, C.P., Sicina, R.M., Jamison, P.C., Chou, A.I.

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Interface trapping properties of nMOSFETs with Al2O3/SiOxNy/Si(100) gate dielectric stacks after exposure to ionizing radiation von FELIX, J. A, XIONG, H. D, FLEETWOOD, D. M, GUSEV, E. P, SCHRIMPF, R. D, STERNBERG, A. L, D'EMIC, C

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Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics von Zhou, X. J., Tsetseris, L., Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., Felix, J. A., Gusev, E. P., D’Emic, C.

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High performance FDSOI CMOS technology with metal gate and high-k von Doris, B., Kim, Y.H., Linder, B.P., Steen, M., Narayanan, V., Boyd, D., Rubino, J., Chang, L., Sleight, J., Topol, A., Sikorski, E., Shi, L., Wong, L., Babich, K., Zhang, Y., Kirsch, P., Newbury, J., Walker, J.F., Carruthers, R., D'Emic, C., Kozlowski, P., Jammy, R., Guarini, K.W., Leong, M.

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